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説明:

One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving the electron-lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr_0.2Ti_0.8O₃ back-gates patterned with periodic, 100-200 nm wide stripe domains. Due to band reconstruction, the h-BN top-gating induces satellite Dirac points in samples with current along the superlattice vector 𝑠̂, a feature absent in samples with current perpendicular to 𝑠̂. The satellite Dirac point position scales with the superlattice period (L) as ∝ 𝐿^𝛽, with β = -1.18±0.06. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to 𝑠̂ quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.

権利情報:

• In Copyright
  

  © 2024 American Physical Society

キーワード: Graphene superlattice, Kronig-Penney potential, Satellite Dirac points

刊行年月日: 2024-01-31

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Letters (ISSN: 10797114) vol. 132 issue. 5 056204

研究助成金:

• U.S. Department of Energy DE-SC0016153
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Ministry of Education, Culture, Sports, Science and Technology
• National Science Foundation ECCS: 2025298
• NSF EPSCoR OIA-2044049
• World Premier International Research Center Initiative
• Nebraska Research Initiative
• Nebraska Center for Energy Sciences Research

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevlett.132.056204

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更新時刻: 2025-08-28 08:30:27 +0900

MDRでの公開時刻: 2025-08-28 08:18:02 +0900