Description:
(abstract)Organic radicals have shown promise for tunable, low-cost spintronic function. However,
integrating the radicals with a Si metal‒oxide‒semiconductor (MOS) structure remains a
challenge. Here, we successfully incorporate stable (4-(((2,5-bis(2-
(phenyl)ethynyl)phenyl)carbonyl)(methyl)amino)-2,2,6,6-tetramethylpiperidin-1-yl)oxidanyl
(TEMPO-OPE) radicals in a Si-MOS-based double-tunnel junction and demonstrate a huge
positive magnetoresistance of up to 400 % at a magnetic field of 7 T and a temperature of 3 K.
This goes along with a significant splitting of the differential conductance peak corresponding
to the highest occupied molecular orbital of TEMPO-OPE under external magnetic fields. First-principles calculations suggest the radical’s singly occupied orbital to be close to the Fermi
level of the junction, and in close spatial proximity to one of the oxide layers and to the OPE
backbone. This could provide a possible origin of the large magnetoresistance. These findings
suggest a path towards incorporating magnetic molecular functionalities into conventional Si
devices, leading to large-scale integration of molecular spintronic devices.
Rights:
Date published: 2026-07-01
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acs.nanolett.6c01526
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Updated at: 2026-07-03 13:31:04 +0900
Published on MDR: 2026-07-03 16:29:20 +0900
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