説明:
(abstract)Organic radicals have shown promise for tunable, low-cost spintronic function. However,
integrating the radicals with a Si metal‒oxide‒semiconductor (MOS) structure remains a
challenge. Here, we successfully incorporate stable (4-(((2,5-bis(2-
(phenyl)ethynyl)phenyl)carbonyl)(methyl)amino)-2,2,6,6-tetramethylpiperidin-1-yl)oxidanyl
(TEMPO-OPE) radicals in a Si-MOS-based double-tunnel junction and demonstrate a huge
positive magnetoresistance of up to 400 % at a magnetic field of 7 T and a temperature of 3 K.
This goes along with a significant splitting of the differential conductance peak corresponding
to the highest occupied molecular orbital of TEMPO-OPE under external magnetic fields. First-principles calculations suggest the radical’s singly occupied orbital to be close to the Fermi
level of the junction, and in close spatial proximity to one of the oxide layers and to the OPE
backbone. This could provide a possible origin of the large magnetoresistance. These findings
suggest a path towards incorporating magnetic molecular functionalities into conventional Si
devices, leading to large-scale integration of molecular spintronic devices.
権利情報:
刊行年月日: 2026-07-01
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acs.nanolett.6c01526
関連資料:
その他の識別子:
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更新時刻: 2026-07-03 13:31:04 +0900
MDRでの公開時刻: 2026-07-03 16:29:20 +0900
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large-magnetoresistance-in-a-si-based-double-tunnel-junction-with-purely-organic-radical-molecules.pdf
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application/pdf |
サイズ | 3.82MB | 詳細 |