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Mn4N, a ferrimagnet that does not contain rare-earth elements, possesses attractive properties for spintronics applications. In particular, Mn4N epitaxial films exhibit a small spontaneous magnetization of about 100 kA m−1, a large spin polarization (p = 0.8), and large perpendicular magnetic anisotropy with a magnetic anisotropy constant of approximately 105 J m−3. More importantly, achieving magnetic compensation at room temperature is possible through impurity doping. This property is particularly significant for spin–torque-based spintronics applications. In the vicinity of the magnetization and/or angular momentum compensation points, magnetization dynamics can be substantially accelerated, enabling high-speed switching and domain wall motion. This article surveys the magnetic properties of impurity-doped Mn4N epitaxial films grown on SrTiO3(001) substrates, highlighting recent results obtained with Cu-, Ag-, Au-, and Pd-doped Mn4N films in comparison with Ni- and Cr-doped Mn4N films. Furthermore, with a view to device applications of Mn4N, we present the formation of ultrathin (~4 nm) Pt epitaxial films with a <100> orientation on MgO (001), which is essential for injecting spins into Mn4N-based overlayers by utilizing the spin Hall effect of heavy metals.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: Ferrimagnet, Mn4N, magnetic compensation, XAS, XMCD, AHE

Date published: 2026-12-31

Publisher: Taylor & Francis

Journal:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 issue. 1 2688056

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6362

First published URL: https://doi.org/10.1080/14686996.2026.2688056

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Updated at: 2026-06-24 11:43:16 +0900

Published on MDR: 2026-06-24 14:27:46 +0900