Download all files (7.81MB)

コレクション

引用

説明:

Mn4N, a ferrimagnet that does not contain rare-earth elements, possesses attractive properties for spintronics applications. In particular, Mn4N epitaxial films exhibit a small spontaneous magnetization of about 100 kA m−1, a large spin polarization (p = 0.8), and large perpendicular magnetic anisotropy with a magnetic anisotropy constant of approximately 105 J m−3. More importantly, achieving magnetic compensation at room temperature is possible through impurity doping. This property is particularly significant for spin–torque-based spintronics applications. In the vicinity of the magnetization and/or angular momentum compensation points, magnetization dynamics can be substantially accelerated, enabling high-speed switching and domain wall motion. This article surveys the magnetic properties of impurity-doped Mn4N epitaxial films grown on SrTiO3(001) substrates, highlighting recent results obtained with Cu-, Ag-, Au-, and Pd-doped Mn4N films in comparison with Ni- and Cr-doped Mn4N films. Furthermore, with a view to device applications of Mn4N, we present the formation of ultrathin (~4 nm) Pt epitaxial films with a <100> orientation on MgO (001), which is essential for injecting spins into Mn4N-based overlayers by utilizing the spin Hall effect of heavy metals.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ferrimagnet, Mn4N, magnetic compensation, XAS, XMCD, AHE

刊行年月日: 2026-12-31

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 27 issue. 1 2688056

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6362

公開URL: https://doi.org/10.1080/14686996.2026.2688056

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-06-24 11:43:16 +0900

MDRでの公開時刻: 2026-06-24 14:27:46 +0900