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Description:

We report on the impact of impurity doping on device performance enhancement of silicon quantum dot (SiQD) light-emitting diode. The increase in hole mobility resulting from boron doping increases the external quantum efficiency of electroluminescence by a factor of 12 and the optical power density by a factor of 2.65.

Rights:

• cc-by-3.0
  

Keyword: Silicon quantum dots, doping, light-emitting diodes, electroluminescence, carrier mobility, boron doping

Date published: 2025-07-08

Publisher: Royal Society of Chemistry (RSC)

Journal:

• Nanoscale Advances (ISSN: 1364548X) vol. 7 p. 4837-4841

Funding:

• Hosokawa Powder Technology Foundation HPTF24111 (光デバイス素子活性層を構成するナノ粒子の成膜法開発)
• Japan Society for the Promotion of Science 24K01462 (コヒーレント構造の概念を拡張した新しい半導体量子ドット創製とデバイス化への展開)
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1225NM5200 (ナノ粒子の構造分析と特性評価)
• Japan Society for the Promotion of Science 24K21720 (近赤外励起アップコンバージョン量子ドットの開発と医療応用)
• Japan Society for the Promotion of Science 23KJ2166 (フォトニック構造を有するカーボンドット光デバイスの創製)

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1039/d5na00349k

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Contact agent: 白幡直人 (ナノアーキテクトニクス材料研究センター, 物質・材料研究機構) SHIRAHATA.Naoto@nims.go.jp

Updated at: 2025-08-06 16:30:35 +0900

Published on MDR: 2025-08-06 16:18:57 +0900