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The strong light-matter interaction in monolayer (1L) transition-metal dichalcogenide (TMD) makes it an ideal candidate for future optoelectronic device applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). ET due to the dipole-dipole coupling is particularly interesting, as it can survive up to several tens of nm, unlike the CT process, which survives only ~1 nm. Our experimental results show that an efficient ET happens from the high-lying excitonic states in 1L WSe2 to the 1L MoS2 'band-nested' region, resulting in more intense MoS2 photoluminescence emission from the HS area. This type of ET from the lower-to-higher optical bandgap material has never been reported. With increasing temperature, the ET process becomes weaker due to increased electron-phonon scattering, destroying enhanced MoS2 emission. Our work provides a new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Transition metal dichalcogenides, energy transfer, photoluminescence

Date published: 2023-06-28

Publisher: American Chemical Society (ACS)

Journal:

• Nano Letters (ISSN: 15306984) vol. 23 issue. 12 p. 5617-5624

Funding:

• Narodowe Centrum Nauki 2017/27/B/ST3/00205
• Narodowe Centrum Nauki 2018/31/B/ST3/02111
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acs.nanolett.3c01127

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Updated at: 2025-02-14 16:31:29 +0900

Published on MDR: 2025-02-14 16:31:29 +0900