Arka Karmakar
;
Tomasz Kazimierczuk
;
Igor Antoniazzi
;
Mateusz Raczyński
;
Suji Park
;
Houk Jang
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Adam Babiński
;
Abdullah Al-Mahboob
;
Maciej R. Molas
説明:
(abstract)The strong light-matter interaction in monolayer (1L) transition-metal dichalcogenide (TMD) makes it an ideal candidate for future optoelectronic device applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). ET due to the dipole-dipole coupling is particularly interesting, as it can survive up to several tens of nm, unlike the CT process, which survives only ~1 nm. Our experimental results show that an efficient ET happens from the high-lying excitonic states in 1L WSe2 to the 1L MoS2 'band-nested' region, resulting in more intense MoS2 photoluminescence emission from the HS area. This type of ET from the lower-to-higher optical bandgap material has never been reported. With increasing temperature, the ET process becomes weaker due to increased electron-phonon scattering, destroying enhanced MoS2 emission. Our work provides a new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.
権利情報:
キーワード: Transition metal dichalcogenides, energy transfer, photoluminescence
刊行年月日: 2023-06-28
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acs.nanolett.3c01127
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-14 16:31:29 +0900
MDRでの公開時刻: 2025-02-14 16:31:29 +0900
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acs.nanolett.3c01127.pdf
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