Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

Arka Karmakar; Tomasz Kazimierczuk; Igor Antoniazzi; Mateusz Raczyński; Suji Park; Houk Jang; Takashi Taniguchi; Kenji Watanabe; Adam Babiński; Abdullah Al-Mahboob; Maciej R. Molas

doi:10.1021/acs.nanolett.3c01127

ジャーナル論文 Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

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Arka Karmakar, Tomasz Kazimierczuk, Igor Antoniazzi, Mateusz Raczyński, Suji Park, Houk Jang, Takashi Taniguchi, Kenji Watanabe, Adam Babiński, Abdullah Al-Mahboob, Maciej R. Molas. Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material. Nano Letters. 2023, 23 (12), 5617-5624. https://doi.org/10.1021/acs.nanolett.3c01127

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The strong light-matter interaction in monolayer (1L) transition-metal dichalcogenide (TMD) makes it an ideal candidate for future optoelectronic device applications. Competing interlayer charge (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). ET due to the dipole-dipole coupling is particularly interesting, as it can survive up to several tens of nm, unlike the CT process, which survives only ~1 nm. Our experimental results show that an efficient ET happens from the high-lying excitonic states in 1L WSe2 to the 1L MoS2 'band-nested' region, resulting in more intense MoS2 photoluminescence emission from the HS area. This type of ET from the lower-to-higher optical bandgap material has never been reported. With increasing temperature, the ET process becomes weaker due to increased electron-phonon scattering, destroying enhanced MoS2 emission. Our work provides a new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.

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