Article Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Jun Uzuhashi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Jun Chen SAMURAI ORCID (National Institute for Materials ScienceROR) ; Ashutosh Kumar ORCID (National Institute for Materials ScienceROR) ; Wei Yi ORCID (National Institute for Materials ScienceROR) ; Tadakatsu Ohkubo SAMURAI ORCID (National Institute for Materials ScienceROR) ; Ryo Tanaka ; Shinya Takashima ; Masaharu Edo ; Kacper Sierakowski ; Michal Bockowski ; Hideki Sakurai ; Tetsu Kachi ; Takashi Sekiguchi ORCID (National Institute for Materials ScienceROR) ; Kazuhiro Hono SAMURAI ORCID (National Institute for Materials ScienceROR)

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Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. JOURNAL OF APPLIED PHYSICS. 2022, 131 (18), 185701-185701. https://doi.org/10.1063/5.0087248
SAMURAI

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(abstract)

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; however, conventional annealing leads to the formation of numerous Mg-enriched defects, which results in inefficient p-type activation. Recent invention of ultra-high-pressure annealing (UHPA) has enabled a significant improvement of p-type activation efficiency. In this study, we investigated the formation of Mg-enriched defects in Mg implanted GaN followed by annealing under both conventional atmospheric pressure and ultra-high-pressure. Unlike the conventional annealing, UHPA leads to much lower number density of Mg-enriched defects. Correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS) analyses have shown that the number density of Mg-enriched defects are substantially suppressed by the UHPA. The dissolved Mg concentrations in the GaN matrix for both the conventional and the UHPA samples are almost at the same value, approximately 2 × 1018 cm-3; however, the UHPA sample shows over one order of magnitude stronger intensity of donor-acceptor-pair (DAP) emission than the conventional one. Thus, the implanted Mg is effectively activated as acceptors through the UHPA technique.

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Keyword: gallium nitride, implantation, atom probe tomography, cathodoluminescence, scanning transmission electron microscopy

Date published: 2022-05-14

Publisher: AIP Publishing

Journal:

  • JOURNAL OF APPLIED PHYSICS (ISSN: 00218979) vol. 131 issue. 18 p. 185701-185701

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4209

First published URL: https://doi.org/10.1063/5.0087248

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Updated at: 2024-01-05 22:11:22 +0900

Published on MDR: 2023-07-04 13:30:13 +0900

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