Article Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

S. Nakagawa ORCID ; T. Shizu ; T. Imai ; M. Nakayama ; J. Kim ; H. Minami ORCID ; K. Kadowaki ORCID ; M. Tsujimoto ORCID ; H. Nakao ORCID ; H. Eisaki ORCID ; S. Ishida ORCID ; T. Mochiku SAMURAI ORCID (National Institute for Materials Science) ; Y. Hasegawa ORCID ; T. Kashiwagi ORCID

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Citation
S. Nakagawa, T. Shizu, T. Imai, M. Nakayama, J. Kim, H. Minami, K. Kadowaki, M. Tsujimoto, H. Nakao, H. Eisaki, S. Ishida, T. Mochiku, Y. Hasegawa, T. Kashiwagi. Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals. JOURNAL OF APPLIED PHYSICS. 2023, 133 (16), 163904. https://doi.org/10.1063/5.0137830
SAMURAI

Description:

(abstract)

We fabricated terahertz (THz) wave emitters from high-temperature superconductor Bi2 Sr2 CaCu2 O8þδ (Bi2212) single crystals annealed under oxygen gas (O2) flow and nitrogen gas (N2) flow conditions. To better understand the annealing effects of the crystal for the device, we evaluated both device properties and a c-axis lattice constant using x-ray diffraction. Compared to the N2-annealed sample, the O2-annealed sample shows higher critical current in the current–voltage characteristics and no clear emission. In addition, multiple hystere- sis loops were observed above 75 K. Based on the x-ray diffraction measurements, it is suggested that the presence of multiple hysteresis loops observed in the I–V characteristics of the O2-annealed sample is caused by the existence of layers that have varying levels of oxygen content along the c-axis direction of the crystal. The formation of these layers is attributed to the deposition process of metallic thin films during the device fabrication procedure. This result indicates that the Bi2212 crystal surface of the O2-annealed sample is more sensitive than that of the N2-annealed one. The information is useful for preparing the Bi2212 crystals for THz-wave emitting devices.

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Keyword: Josephson junction, terahertz emitter, high-temperature superconductor, annealing condition, Bi2 Sr2 CaCu2 O8

Date published: 2023-04-28

Publisher: AIP Publishing

Journal:

  • JOURNAL OF APPLIED PHYSICS (ISSN: 10897550) vol. 133 issue. 16 p. 1-8 163904

Funding:

  • Japan Society for the Promotion of Science 15H01996
  • Japan Society for the Promotion of Science 17K05018
  • Japan Society for the Promotion of Science 20H02590
  • TIA-kakehashi grants 2018-43
  • TIA-kakehashi grants 2019-47

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0137830

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Updated at: 2024-11-12 11:51:15 +0900

Published on MDR: 2024-04-27 08:30:14 +0900

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