S. Nakagawa
;
T. Shizu
;
T. Imai
;
M. Nakayama
;
J. Kim
;
H. Minami
;
K. Kadowaki
;
M. Tsujimoto
;
H. Nakao
;
H. Eisaki
;
S. Ishida
;
T. Mochiku
(National Institute for Materials Science)
;
Y. Hasegawa
;
T. Kashiwagi
説明:
(abstract)We fabricated terahertz (THz) wave emitters from high-temperature superconductor Bi2 Sr2 CaCu2 O8þδ (Bi2212) single crystals annealed under oxygen gas (O2) flow and nitrogen gas (N2) flow conditions. To better understand the annealing effects of the crystal for the device, we evaluated both device properties and a c-axis lattice constant using x-ray diffraction. Compared to the N2-annealed sample, the O2-annealed sample shows higher critical current in the current–voltage characteristics and no clear emission. In addition, multiple hystere- sis loops were observed above 75 K. Based on the x-ray diffraction measurements, it is suggested that the presence of multiple hysteresis loops observed in the I–V characteristics of the O2-annealed sample is caused by the existence of layers that have varying levels of oxygen content along the c-axis direction of the crystal. The formation of these layers is attributed to the deposition process of metallic thin films during the device fabrication procedure. This result indicates that the Bi2212 crystal surface of the O2-annealed sample is more sensitive than that of the N2-annealed one. The information is useful for preparing the Bi2212 crystals for THz-wave emitting devices.
権利情報:
キーワード: Josephson junction, terahertz emitter, high-temperature superconductor, annealing condition, Bi2 Sr2 CaCu2 O8
刊行年月日: 2023-04-28
出版者: AIP Publishing
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1063/5.0137830
関連資料:
その他の識別子:
連絡先: ()
更新時刻: 2024-11-12 11:51:15 +0900
MDRでの公開時刻: 2024-04-27 08:30:14 +0900
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JApplPhys133_163904.pdf
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application/pdf |
サイズ | 2.78MB | 詳細 |