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説明:

Interlayer excitons in semiconducting bilayers separated by insulating hBN layers constitute a promising platform for investigation of strongly correlated bosonic phases. Here, we report an optical method for the generation and characterization of long-lived interlayer excitons. We find confirmation of tightly bound interlayer excitons by measuring 1s and 2s intralayer excitons in each layer concurrently. Using a pump-probe technique, we find interlayer exciton lifetimes up to 8.8 µs, increasing with the thickness of the hBN. Optical access to long-lived interlayer exciton dynamics is promising for exploring degenerate Bose-Fermi mixtures composed of interlayer excitons and itinerant electrons or holes.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: interlayer excitons, long-lived
 exciton, van der Waals heterostructures


刊行年月日: 2025-12-10

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Letters (ISSN: 10797114) vol. 135 issue. 24 p. 246502-246502 246502

研究助成金:

• Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung 200021-204076
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Core Research for Evolutional Science and Technology JPMJCR24A5
• Japan Science and Technology Agency
• Ministry of Education, Culture, Sports, Science and Technology
• World Premier International Research Center Initiative

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/stgs-2s58

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更新時刻: 2026-05-11 13:30:14 +0900

MDRでの公開時刻: 2026-05-11 16:25:04 +0900