Journal article Antiferromagnetic Films and Their Applications
Atsufumi Hirohata (author) (Search by this author)
;
David C. Lloyd (author) (Search by this author)
;
Takahide Kubota (author) (Search by this author)
;
Takeshi Seki (author) (Search by this author)
;
Koki Takanashi (author) (Search by this author)
;
Hiroaki Sukegawa (author) (Search by this author)
ORCID https://orcid.org/0000-0002-4034-7848
National Institute for Materials Science
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Zhenchao Wen (author) (Search by this author)
ORCID https://orcid.org/0000-0001-7496-1339
National Institute for Materials Science
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ORCID SAMURAI ;
Seiji Mitani (author) (Search by this author)
ORCID https://orcid.org/0000-0002-1348-0774
National Institute for Materials Science
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ORCID SAMURAI ;
Hiroki Koizumi (author) (Search by this author)
130-IEEE Access 11, 117443 (2023)-Hirohata.pdf
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Citation
Atsufumi Hirohata, David C. Lloyd, Takahide Kubota, Takeshi Seki, Koki Takanashi, Hiroaki Sukegawa, Zhenchao Wen, Seiji Mitani, Hiroki Koizumi. Antiferromagnetic Films and Their Applications. IEEE Access. 2023, 11 (), 117443-117459. https://doi.org/10.1109/access.2023.3326448
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Description:

(abstract)

Spintronic devices are expected to replace the recent nanoelectronic memories and sensors due to their efficiency in energy consumption and functionality with scalability. To date, spintronic devices, namely magnetoresistive junctions, employ ferromagnetic materials by storing information bits as their magnetization directions. However, in order to achieve further miniaturization with maintaining and/or improving their efficiency and functionality, new materials development is required: 1) increase in spin polarization of a ferromagnet or 2) replacement of a ferromagnet by an antiferromagnet. Antiferromagnetic materials have been used to induce an exchange bias to the neighboring ferromagnet but they have recently been found to demonstrate a 100% spin-polarized electrical current, up to THz oscillation and topological effects. In this review, the recent development of three types of antiferromagnets is summarized with offering their future perspectives towards device applications.

Rights:

Keyword: spintronics, antiferromagnetic materials, thin films

Date published: 2023-10-20

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

  • IEEE Access (ISSN: 21693536) vol. 11 p. 117443-117459

Funding:

  • Engineering and Physical Sciences Research Council EP/K03278X/1
  • Engineering and Physical Sciences Research Council EP/M02458X/1
  • Engineering and Physical Sciences Research Council EP/V007211/1
  • Seventh Framework Programme NMP3-SL-2013-604398
  • Global Institute for Materials Research Tohoku
  • Core Research for Evolutional Science and Technology JPMJCR17J5
  • X-NICS JPJ011438

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1109/access.2023.3326448

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Updated at: 2024-12-10 16:56:14 +0900

Published on MDR: 2024-12-10 16:56:15 +0900

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