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説明:

Spintronic devices are expected to replace the recent nanoelectronic memories and sensors due to their efficiency in energy consumption and functionality with scalability. To date, spintronic devices, namely magnetoresistive junctions, employ ferromagnetic materials by storing information bits as their magnetization directions. However, in order to achieve further miniaturization with maintaining and/or improving their efficiency and functionality, new materials development is required: 1) increase in spin polarization of a ferromagnet or 2) replacement of a ferromagnet by an antiferromagnet. Antiferromagnetic materials have been used to induce an exchange bias to the neighboring ferromagnet but they have recently been found to demonstrate a 100% spin-polarized electrical current, up to THz oscillation and topological effects. In this review, the recent development of three types of antiferromagnets is summarized with offering their future perspectives towards device applications.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: spintronics, antiferromagnetic materials, thin films

刊行年月日: 2023-10-20

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE Access (ISSN: 21693536) vol. 11 p. 117443-117459

研究助成金:

• Engineering and Physical Sciences Research Council EP/K03278X/1
• Engineering and Physical Sciences Research Council EP/M02458X/1
• Engineering and Physical Sciences Research Council EP/V007211/1
• Seventh Framework Programme NMP3-SL-2013-604398
• Global Institute for Materials Research Tohoku
• Core Research for Evolutional Science and Technology JPMJCR17J5
• X-NICS JPJ011438

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1109/access.2023.3326448

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更新時刻: 2024-12-10 16:56:14 +0900

MDRでの公開時刻: 2024-12-10 16:56:15 +0900