José M. Caridad
;
Óscar Castelló
;
Sofía M. López Baptista
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Hartmut G. Roskos
;
Juan A. Delgado-Notario
Description:
(abstract)Plasmonic resonant detection of Terahertz (THz) radiations in field effect transistor (FET) devices has become a vibrant field of investigation over the past two decades. Such systems enable the selective detection of THz fields and are promising for a wide range of applications. However, clear signatures of plasmon-assisted resonances in THz FETs have only been measured at cryogenic temperatures so far and are absent at application-relevant room-temperature conditions. In this work, we observe the sought-after room-temperature resonant detection of THz radiation in short-channel FETs made from high-quality single-layer graphene. The survival of this resonant regime at high temperatures in unbiased devices ultimately relies on the weak intrinsic electron scattering offered by this material, which avoids the huge damping of the plasma oscillations in the two-dimensional electron fluid.
Rights:
Keyword: Terahertz photodevices, plasmonic resonances, graphene
Date published: 2024-01-24
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acs.nanolett.3c04300
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Updated at: 2025-02-14 16:30:45 +0900
Published on MDR: 2025-02-14 16:30:45 +0900
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