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Plasmonic resonant detection of Terahertz (THz) radiations in field effect transistor (FET) devices has become a vibrant field of investigation over the past two decades. Such systems enable the selective detection of THz fields and are promising for a wide range of applications. However, clear signatures of plasmon-assisted resonances in THz FETs have only been measured at cryogenic temperatures so far and are absent at application-relevant room-temperature conditions. In this work, we observe the sought-after room-temperature resonant detection of THz radiation in short-channel FETs made from high-quality single-layer graphene. The survival of this resonant regime at high temperatures in unbiased devices ultimately relies on the weak intrinsic electron scattering offered by this material, which avoids the huge damping of the plasma oscillations in the two-dimensional electron fluid.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Terahertz photodevices, plasmonic resonances, graphene

刊行年月日: 2024-01-24

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 24 issue. 3 p. 935-942

研究助成金:

• European Research Council 101039754
• Agencia Estatal de Investigaci?n
• Ministry of Education, Culture, Sports, Science and Technology
• Ministerio de Ciencia e Innovaci?n PID2021-126483OB-I00
• Ministerio de Ciencia e Innovaci?n PID2021-128154NA-I00
• Ministerio de Ciencia e Innovaci?n RYC2019-028443-I
• European Regional Development Fund
• Deutsche Forschungsgemeinschaft RO 770/40-2
• Deutsche Forschungsgemeinschaft RO 770/53-1
• Universidad de Salamanca
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Junta de Castilla y Le?n SA103P23
• European Social Fund Plus

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.3c04300

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更新時刻: 2025-02-14 16:30:45 +0900

MDRでの公開時刻: 2025-02-14 16:30:45 +0900