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We analyzed the computational mechanism of redox-type ion-gating reservoirs (Redox-IGRs)—a class of physical reservoir computing (PRC) devices that utilize redox dynamics induced by ion gating for information processing—operated with physical masking (PM), in which a simple triangular drain voltage dynamically modulates the conductance of the device. The periodic drain perturbation enriches the temporal diversity of the conductance response, leading to enhanced nonlinear dynamics. Information-processing-capacity (IPC) analysis revealed that PM markedly increases nonlinear capacity while maintaining linear memory capacity, resulting in a total IPC increase from 11 to 20. This doubling of IPC indicates an expansion of the reservoir’s effective dimensionality and explains the improved performance observed in nonlinear dynamical system prediction tasks. These findings demonstrate that PM effectively enhances the expressive power of Redox-IGRs and provides a simple, general strategy for boosting the high-dimensional dynamics of PRC systems.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: reservoir computing, neuromorphic computing, iontronics, ion-gating reservoir, information processing capacity

Date published: 2025-11-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 11

Funding:

• JST JPMJPR23H4
• JSPS JP24KJ0299
• JSPS JP25K17941
• MEXT JPMXP1224NM5236
• MEXT JPMXP1225NM 5329

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1347-4065/ae1d84

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Updated at: 2025-12-09 16:30:18 +0900

Published on MDR: 2025-12-09 12:30:30 +0900