Tailoring photodetection performance of selfpowered Ga2O3 UV solar-blind photodetectors through asymmetric electrodes

Keyun Gu; Zilong Zhang; Haofei Huang; Ke Tang; Jian Huang; Meiyong Liao; Linjun Wang

doi:10.1039/D3TC00387F

Article Tailoring photodetection performance of selfpowered Ga2O3 UV solar-blind photodetectors through asymmetric electrodes

Keyun Gu ; Zilong Zhang (National Institute for Materials Science) ; Haofei Huang ; Ke Tang ; Jian Huang ; Meiyong Liao (National Institute for Materials Science) ; Linjun Wang

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Keyun Gu, Zilong Zhang, Haofei Huang, Ke Tang, Jian Huang, Meiyong Liao, Linjun Wang. Tailoring photodetection performance of selfpowered Ga2O3 UV solar-blind photodetectors through asymmetric electrodes. Journal of Materials Chemistry C. 2023, 11 (16), 5371-5377. https://doi.org/10.1039/D3TC00387F

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Self-powered solar-blind UV detectors are playing an increasingly critical role in the sustainable
development of photodetectors with low energy consumption. In this work, the design of electrode
structures, including an asymmetric-size structure and an asymmetric-material structure, was proposed to achieve self-powered photodetection function for the solar-blind UV a-Ga2O3 based photodetectors with metal–semiconductor–metal (MSM) structures. The results indicate that the Au/Ti/Ga2O3/Ti/Au photodetector with an asymmetric-electrode-size shows photodetection performances of responsivity (R), external quantum efficiency (EQE), and detectivity (D*) of 0.149 mA W1, 0.07%, and 3.1 109 cm Hz1/2 W1@0 V, respectively. The asymmetric-electrode-material photodetectors with Au/Ti/Ga2O3/GZO and Au/Ti/Ga2O3/Au structures possess photodetection performances of R, EQE, and D* of 0.591 mA W1, 0.29%, and 2.9 109 cm Hz1/2 W1 and 0.148 mA W1, 0.07%, and 7.8 108 cm Hz1/2 W1@0 V, respectively. The electrodes with the asymmetric-size structure and the asymmetric-material structure result in different Schottky barrier heights in the interfaces of the electrodes and films, which are favorable for realizing self-powered performance. The self-powered solar-blind UV a-Ga2O3 based photodetectors have a fast photo-response speed, high stability and high repeatability. These findings provide a promising and facile route to fabricate a-Ga2O3 self-powered solar-blind UV photodetectors with high photodetection.

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