Article Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Yuhua Tsai ORCID (National Institute for Materials Science) ; Masaaki Kobata ORCID ; Tatsuo Fukuda ORCID ; Hajime Tanida ORCID ; Toru Kobayashi ; Yoshiyuki Yamashita SAMURAI ORCID (National Institute for Materials Science)

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Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, Yoshiyuki Yamashita. Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001). Applied Physics Letters. 2024, 124 (11), . https://doi.org/10.1063/5.0198160
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Description:

(abstract)

Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。

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Keyword: Ga2O3, dopant, b-Ga2O3

Date published: 2024-03-11

Publisher: AIP Publishing

Journal:

  • Applied Physics Letters (ISSN: 00036951) vol. 124 issue. 11

Funding:

  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1223AE0025
  • Japan Atomic Energy Agency 2023B-E09

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4444

First published URL: https://doi.org/10.1063/5.0198160

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Updated at: 2024-03-19 12:30:20 +0900

Published on MDR: 2024-03-19 12:30:20 +0900

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