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説明:

Defect formation in epitaxial Mg2Sn1–xGex thermoelectric (TE) thin films grown via MBE was studied. We examined the defect formations and structures using cross-sectional transmission electron microscopy and positron annihilation spectroscopy. The defect formation tends to be influenced by Ge incorporation into the Mg2Sn matrix phase of epitaxial thin films. Mg vacancies (VMg) were identified as point defects, primarily concentrated in the film’s mid-layer. In films with higher Ge composition, stacking faults were observed. The concentration of vacancy-type point defects decreased as the Ge concentration increased. This implies that the vacancy atoms, which would have otherwise been created by increasing chemical pressure due to the higher Ge content, might have played a role in the formation of stacking faults. The high concentration of vacancy-type defects resulted in the lowest thermal conductivity, demonstrating their significance as effective phonon scattering centers in epitaxial TE films.

権利情報:

• In Copyright
  

  This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad1259

キーワード: thermoelectric

刊行年月日: 2024-02-29

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 63 issue. 2 02SP40

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4610

公開URL: https://doi.org/10.35848/1347-4065/ad1259

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更新時刻: 2024-07-29 16:30:22 +0900

MDRでの公開時刻: 2024-07-29 16:30:22 +0900