K. Masuda
(National Institute for Materials Science)
;
Y. Miura
(National Institute for Materials Science)
Description:
(abstract)2つの半導体バリアを持つ磁気トンネル接合(Fe/CuInSe2/Fe及びFe/CuGaSe2/Fe)の磁気伝導特性に関し、第一原理計算に基づく詳細な解析を行った。本論文ではその結果について議論を行った。
Rights:
Keyword: Tunnel magnetoresistance, Magnetic tunnel junction, semiconductor, Spintronics
Date published: 2018-02-08
Publisher: The Magnetics Society of Japan
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.3379/msjmag.1803r006
Related item:
Other identifier(s):
Contact agent:
Updated at: 2024-04-11 14:48:54 +0900
Published on MDR: 2024-04-11 12:30:20 +0900
| Filename | Size | |||
|---|---|---|---|---|
| Filename |
42_1803R006.pdf
(Thumbnail)
application/pdf |
Size | 936 KB | Detail |