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We demonstrate a facile and safe anisotropic gas etching technique for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas mixture containing 3.96 vol% H2. This etching gas, being neither explosive nor toxic, can be safely exhausted into the atmosphere, simplifying the etching system setup. Thermodynamic calculations confirm the viability of gas-phase etching above 676°C without the formation of Ga droplets. Experimental verification was achieved by etching (-102) β-Ga2O3 substrates within a temperature range of 700–950°C. Moreover, selective-area etching using this method yielded trenches and fins with vertical and flat sidewalls, defined by (100) facets with the lowest surface energy density, demonstrating significant anisotropic etching capability.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, forming gas, anisotropic etching, plasma-free process

刊行年月日: 2024-12-31

出版者: Informa UK Limited

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 25 issue. 1

研究助成金:

• TEPCO Memorial Foundation

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1080/14686996.2024.2378683

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更新時刻: 2024-07-31 12:30:20 +0900

MDRでの公開時刻: 2024-07-31 12:30:20 +0900