High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

LIU, Jiangwei; OOSATO, Hirotaka; DA, Bo; KOIDE, Yasuo

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High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

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In this paper, planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on single-crystalline diamond substrate. Both MOSFETs show good operations with on/off ratios as high as 1010. Current output maximum normalized by gate width for the triple-gate H-diamond MOSFET is ‒271.3 mA mm‒1, which is almost two times higher than that of the planar-type MOSFET. This study is meaningful to fabricate high current out and downscaled H-diamond MOSFETs.

First published at

https://doi.org/10.1109/JEDS.2019.2915250

Creator

Name

LIU, Jiangwei

ORCID

https://orcid.org/0000-0003-2580-7401

Organization

National Institute for Materials Science

Sub organization

機能性材料研究拠点

Role

author

Name

OOSATO, Hirotaka

Organization

National Institute for Materials Science

Sub organization

技術開発・共用部門/微細加工プラットフォーム

Role

author

Name

DA, Bo

ORCID

https://orcid.org/0000-0002-0785-8662

Organization

National Institute for Materials Science

Sub organization

統合型材料開発・情報基盤部門/材料データプラットフォームセンター/材料データ解析グループ

Role

author

Name

KOIDE, Yasuo

Organization

National Institute for Materials Science

Sub organization

技術開発・共用部門/ＮＩＭＳ・名大窒化ガリウム評価基盤研究ラボラトリ　－天野・小出共同研究ラボ－

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author

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