Download file (3.68MB)
Download as zip (3.49MB)

コレクション

引用

説明:

GeSn alloy has emerged as an attractive active material for Si-based mid-infrared (MIR) lasers due to its direct bandgap nature at higher Sn concentrations. Here, we report on an optically-pumped GeSn MIR lasers based on planar slab waveguide with a top Si ridge structure. The inclusion of 10% Sn transforms the GeSn active layer into a direct bandgap material. The Si ridge structure ensures appropriate optical confinements with reduced scattering loss from the waveguide sidewall. Lasing action was achieved under optical pumping with a low threshold of 60.85 kW/cm2 and an emission wavelength of 2238 nm at T = 40 K. Lasing action was also observed up to T = 90 K with a threshold of 170 kW/cm2.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

  © 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
  
  Authors and readers may use, reuse, and build upon the article, or use it for text or data mining, as long as the purpose is non-commercial and appropriate attribution is maintained.

キーワード: Mid-infrared lasers, GeSn

刊行年月日: 2024-10-21

出版者: Optica Publishing Group

掲載誌:

• Optics Express (ISSN: 10944087) vol. 32 issue. 22 p. 39560-

研究助成金:

• Taiwan Semiconductor Research Institute JDP112-Y1-028
• Taiwan Semiconductor Research Institute JDP113-Y1-044
• National Science and Technology Council NSTC 112-2636-E-194-001
• National Science and Technology Council NSTC 113-2636-E-194-001

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1364/oe.540223

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-10-21 16:30:21 +0900

MDRでの公開時刻: 2024-10-21 16:30:22 +0900