Self-heating effects and switching dynamics in graphene multiterminal Josephson junctions

Máté Kedves; Tamás Pápai; Gergo ̋ Fülöp; Kenji Watanabe; Takashi Taniguchi; Péter Makk; Szabolcs Csonka

doi:10.1103/PhysRevResearch.6.033143

論文 Self-heating effects and switching dynamics in graphene multiterminal Josephson junctions

Máté Kedves (Budapest University of Technology and Economics) ; Tamás Pápai (Budapest University of Technology and Economics) ; Gergo ̋ Fülöp (Budapest University of Technology and Economics) ; Kenji Watanabe (Research Center for Electronic and Optical Materials, National Institute for Materials Science) ; Takashi Taniguchi (Research Center for Materials Nanoarchitectonics (MANA)/Nanomaterials Field/High-Pressure Structural Controls Group, National Institute for Materials Science) ; Péter Makk (Budapest University of Technology and Economics) ; Szabolcs Csonka (Budapest University of Technology and Economics)

Download file (2.83MB)
Download as zip (2.11MB)

コレクション

引用

Máté Kedves, Tamás Pápai, Gergo ̋ Fülöp, Kenji Watanabe, Takashi Taniguchi, Péter Makk, Szabolcs Csonka. Self-heating effects and switching dynamics in graphene multiterminal Josephson junctions. Physical Review Research. 2024, 6 (3), 33143-. https://doi.org/10.1103/PhysRevResearch.6.033143

(BibTeX)

説明:

(abstract)

We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behaviour of this multi- terminal Josephson junction (MTJJ) system. We show that existing simulation methods based on resistively and capacitively shunted Josephson junction networks can be significantly improved by taking into account these heating effects. We also investigate the phase dynamics in our MTJJ by measuring its switching current distribution and find correlated switching events in different junc- tions. We show that the switching dynamics is governed by phase diffusion at low temperatures. Furthermore, we find that self-heating introduces additional damping which results in overdamped I-V characteristics when normal and supercurrents coexist in the device.

権利情報: