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Conventionally, SiC powder in a graphite crucible decomposes at temperatures above 2000°C into various molecular species (Si2C, SiC2, Si, C). Gaseous components rise and grow as SiC on the seed crystal, but residual carbon particles and condensed Si droplets cause crystal defects and equipment damage.
Observations of the crucible residue after the Si-C reactions at high-temperatures using SEM and XRD led to a new Si-C phase diagram, validated through thermodynamic calculations. Based on this understanding, a new sublimation furnace design was proposed.

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キーワード: SIC単結晶, 昇華法, 準安定相平衡

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会議: ICSCRM2026 (2026-09-27 - 2026-10-02)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.8636

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更新時刻: 2026-10-05 11:49:41 +0900

MDRでの公開時刻: 2026-10-05 14:21:33 +0900