Dhruba B. Khadka
(National Institute for Materials Science)
;
Yasuhiro Shirai
(National Institute for Materials Science)
;
Masatoshi Yanagida
(National Institute for Materials Science)
;
Kenjiro Miyano
(National Institute for Materials Science)
説明:
(abstract)The phenethylammonium thiocyanate (PEASCN) was introduced into the FASnI 3 perovskite film as a pseudohalide functional additive. This results in the suppression of Sn-oxidation and compact and larger grain film with better crystallinity. The device with PEASCN additive improved the power conversion efficiency (PCE) from 4.52% (control) to 9.65% (PEASCN). The device analysis revealed that the PEASCN additive has improved the optoelectronic properties coupled with a higher diffusion potential and passivation of defect densities in the Sn-PSCs. This report suggests that the pseudohalide-based functional additive is propitious for film growth, modification of surface chemistry, and defects at interface and bulk.
権利情報:
キーワード: Tin perovskite, Pseudohalide, Tin oxidation, Additive, Stability, Defect density.
刊行年月日: 2022-06-05
出版者: IEEE
掲載誌:
研究助成金:
原稿種別: 査読前原稿 (Author's original)
MDR DOI: https://doi.org/10.48505/nims.5041
公開URL: https://doi.org/10.1109/pvsc48317.2022.9938869
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-11-28 16:31:00 +0900
MDRでの公開時刻: 2024-11-28 16:31:00 +0900
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2022_Sn-PSC_Khadka.pdf
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