Passivation-free high performance self-powered photodetector based on Si nanostructure-PEDOT:PSS hybrid heterojunction

Kumaar Swamy Reddy Bapathi; Mostafa F. Abdelbar; Wipakorn Jevasuwan; Pramod H. Borse; Sushmee Badhulika; Naoki Fukata

doi:10.1016/j.apsusc.2023.158992

論文 Passivation-free high performance self-powered photodetector based on Si nanostructure-PEDOT:PSS hybrid heterojunction

Kumaar Swamy Reddy Bapathi (Indian Institute of Technology Hyderabad) ; Mostafa F. Abdelbar (Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science) ; Wipakorn Jevasuwan (Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science) ; Pramod H. Borse (International Advanced Research Centre for Powder Metallurgy & New Materials) ; Sushmee Badhulika (Indian Institute of Technology Hyderabad) ; Naoki Fukata (Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science)

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Kumaar Swamy Reddy Bapathi, Mostafa F. Abdelbar, Wipakorn Jevasuwan, Pramod H. Borse, Sushmee Badhulika, Naoki Fukata. Passivation-free high performance self-powered photodetector based on Si nanostructure-PEDOT:PSS hybrid heterojunction. APPLIED SURFACE SCIENCE. 2023, 648 (), 158992. https://doi.org/10.1016/j.apsusc.2023.158992

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(abstract)

We demonstrate a simple chemical polishing process to reduce defects and fabricate a conformable heterojunction between Si nanostructures and PEDOT:PSS. Si nanostructures fabricated by metal-assisted chemical etching (MACE) technique and subsequently treated by the chemical polishing process are spin-coated with PEDOT:PSS to form heterojunction and employed as self-powered broadband photodetector. The optimized device shows superior performance, such as high responsivity of 555.34 mA/W, quick rise/fall times of 79 ms/81 ms, high External Quantum Efficiency (EQE) of 0.8 at zero bias (0 V) and high photostability up to 500 illumination cycles. Dark I-V characteristics and carrier lifetime measurements reveal that the enhanced performance of chemically polished devices is attributed to the formation of a conformable heterojunction and reduction in defects in the Si nanostructures. Given the scalability and simplicity of the demonstrated passivation-free approach, this work may aid the fabrication of highperformance hybrid Si nanostructured photodetectors.

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