説明:
(abstract)The transconductance gm = dID/dVG of a field-effect transistor (FET) is conventionally read as a proxy for carrier density. We show that it is instead a spectroscopic probe of the carrier distribution: because gm weights the spectral current j(E) by the gate-voltage derivative ∂f(E)/∂VG and integrates over energy, it is sensitive to the shape of f(E), not merely its integrated weight n. We develop an energy-resolved transport framework for two-dimensional (2D) FETs and, within a gate-independent spectral-kernel approximation, derive the decomposition gm(n) + gm(α) into the conventional density-modulation term gm(n) and a distribution-shape-driven term gm(α). The latter, obtained as the residual after subtracting the smooth density-modulation background from the measured gm, exhibits a characteristic anomalous peak at a gate voltage VGpk. This peak has no counterpart in equilibrium transport and cannot be explained by carrier density modulation alone. With the spectral kernel calibrated, the peak position and height—extracted from standard dc/lock-in gm sweeps—constrain the hot-carrier energy E0, spectral width σ, and generation threshold nc, realizing a steady-state, all-electrical spectroscopy of the carrier distribution. An optional time-resolved extension further recovers the carrier relaxation time τ from the transient response following a pump excitation, establishing the 2D FET as a distribution-function spectrometer that requires no optical readout.
権利情報:
©2026 American Physical Society
キーワード: Hot-carrier transport, Transconductance spectroscopy, Two-dimensional semiconductors, Field-effect transistors, Nonequilibrium carrier distributions, Energy-resolved transport, Carrier relaxation dynamics
刊行年月日: 2026-09-30
出版者: American Physical Society (APS)
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研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.8661
公開URL: https://doi.org/10.1103/fm13-kghl
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更新時刻: 2026-10-15 14:08:00 +0900
MDRでの公開時刻: 2026-10-15 16:29:42 +0900