ジャーナル論文 Hot-carrier distribution spectroscopy by transconductance in two-dimensional field-effect transistors
Katsunori Wakabayashi (author) (この著者で検索)
ORCID https://orcid.org/0000-0002-9147-9939 (unauthenticated)
National Institute for Materials Science
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コレクション

引用
Katsunori Wakabayashi. Hot-carrier distribution spectroscopy by transconductance in two-dimensional field-effect transistors. Physical Review Applied. 2026, 26 (3), 034075. https://doi.org/10.1103/fm13-kghl

説明:

(abstract)

The transconductance gm = dID/dVG of a field-effect transistor (FET) is conventionally read as a proxy for carrier density. We show that it is instead a spectroscopic probe of the carrier distribution: because gm weights the spectral current j(E) by the gate-voltage derivative ∂f(E)/∂VG and integrates over energy, it is sensitive to the shape of f(E), not merely its integrated weight n. We develop an energy-resolved transport framework for two-dimensional (2D) FETs and, within a gate-independent spectral-kernel approximation, derive the decomposition gm(n) + gm(α) into the conventional density-modulation term gm(n) and a distribution-shape-driven term gm(α). The latter, obtained as the residual after subtracting the smooth density-modulation background from the measured gm, exhibits a characteristic anomalous peak at a gate voltage VGpk. This peak has no counterpart in equilibrium transport and cannot be explained by carrier density modulation alone. With the spectral kernel calibrated, the peak position and height—extracted from standard dc/lock-in gm sweeps—constrain the hot-carrier energy E0, spectral width σ, and generation threshold nc, realizing a steady-state, all-electrical spectroscopy of the carrier distribution. An optional time-resolved extension further recovers the carrier relaxation time τ from the transient response following a pump excitation, establishing the 2D FET as a distribution-function spectrometer that requires no optical readout.

権利情報:

キーワード: Hot-carrier transport, Transconductance spectroscopy, Two-dimensional semiconductors, Field-effect transistors, Nonequilibrium carrier distributions, Energy-resolved transport, Carrier relaxation dynamics

刊行年月日: 2026-09-30

出版者: American Physical Society (APS)

掲載誌:

  • Physical Review Applied (ISSN: 23317019) vol. 26 issue. 3 034075

研究助成金:

  • JSPS KAKENHI JP25K01609
  • JSPS KAKENHI JP22H05473
  • JSPS KAKENHI JP21H01019

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.8661

公開URL: https://doi.org/10.1103/fm13-kghl

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更新時刻: 2026-10-15 14:08:00 +0900

MDRでの公開時刻: 2026-10-15 16:29:42 +0900

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