Vertical spintronic devices based on half-metallic Heusler alloys: progress and future outlook

Yuya Sakuraba; Shinya Yamada; Hirofumi Suto; Tomoya Nakatani; Kohei Hamaya

doi:10.1088/1361-6463/ae7387

ジャーナル論文 Vertical spintronic devices based on half-metallic Heusler alloys: progress and future outlook

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Sakuraba_2026_J._Phys._D__Appl._Phys._59_253003.pdf

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Yuya Sakuraba, Shinya Yamada, Hirofumi Suto, Tomoya Nakatani, Kohei Hamaya. Vertical spintronic devices based on half-metallic Heusler alloys: progress and future outlook. Journal of Physics D: Applied Physics. 2026, 59 (25), 253003. https://doi.org/10.1088/1361-6463/ae7387

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(abstract)

Half-metallic Heusler alloys are among the most promising material platforms for spintronics, as they uniquely combine an ideally fully spin-polarized electronic structure at the Fermi level with high Curie temperatures. This combination enables pronounced spin-dependent phenomena and makes these materials highly attractive for practical device applications. To date, vertical spintronic devices such as magnetic tunnel junctions, current-perpendicular-to-plane giant magnetoresistance and spin-torque oscillator devices have demonstrated outstanding performance that clearly reflects the half-metallic nature of Heusler alloys. In addition, significant progress has been achieved in efficient spin injection into semiconductors, a key requirement for next-generation logic and information-processing devices. In this review, we focus on vertical-geometry spintronic devices, which are of particular importance from the viewpoint of device scaling, integration density, and practical implementation. We provide an overview of the experimental and theoretical advances achieved using half-metallic Heusler alloys in these device architectures, and discuss the remaining challenges and future perspectives toward their realization in next-generation spintronic technologies.

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