論文 Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Xiujun Wang ; Sannian Song ; Haomin Wang ; Tianqi Guo ; Yuan Xue ; Ruobing Wang ; HuiShan Wang ; Lingxiu Chen ; Chengxin Jiang ; Chen Chen ; Zhiyuan Shi ; Tianru Wu ; Wenxiong Song ; Sifan Zhang ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Zhitang Song ; Xiaoming Xie

Advanced Science - 2022 - Wang - Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon.pdf
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Xiujun Wang, Sannian Song, Haomin Wang, Tianqi Guo, Yuan Xue, Ruobing Wang, HuiShan Wang, Lingxiu Chen, Chengxin Jiang, Chen Chen, Zhiyuan Shi, Tianru Wu, Wenxiong Song, Sifan Zhang, Kenji Watanabe, Takashi Taniguchi, Zhitang Song, Xiaoming Xie. Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact. Advanced Science. 2022, 9 (25), 2202222. https://doi.org/10.1002/advs.202202222
SAMURAI

説明:

(abstract)

Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, we demonstrate that a write energy can be reduced to about ~53.7 fJ in a cell with ~3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ~1 nm2. It is found that the cycle endurance exhibits an obvious dependence on the bias polarity in the cell with structure asymmetry. If a positive bias was applied to graphene electrode, the endurance can be extended at least one order longer than the case with reversal of polarity. The work represents a great technological advance for the low power PCRAM and could benefit for in-memory computing in future

権利情報:

キーワード: Phase-change memory, graphene nanoribbon, low-power device

刊行年月日: 2022-07-18

出版者: Wiley

掲載誌:

  • Advanced Science (ISSN: 21983844) vol. 9 issue. 25 2202222

研究助成金:

  • National Natural Science Foundation of China 91964102
  • National Natural Science Foundation of China 91964204
  • National Natural Science Foundation of China 51772317
  • Science and Technology Commission of Shanghai Municipality 18511110700
  • Science and Technology Commission of Shanghai Municipality 20DZ2203600
  • China Postdoctoral Science Foundation 2017M621563
  • China Postdoctoral Science Foundation 2018T110415
  • China Postdoctoral Science Foundation 2019T120366
  • China Postdoctoral Science Foundation 2019M651620
  • China Postdoctoral Science Foundation BX2021331
  • China Postdoctoral Science Foundation 2021M703338
  • National Natural Science Foundation of China 12004406
  • National Natural Science Foundation of China 61874129

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/advs.202202222

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更新時刻: 2025-03-03 16:30:40 +0900

MDRでの公開時刻: 2025-03-03 16:30:40 +0900

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