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説明:

The atomistic interface structure between β-FeSi2 and Si substrate was investigated by cross-sectional scanning transmission electron microscopy and density functional theory calculations (DFT). A high quality single crystalline β-FeSi2 film was epitaxialy grown on Si(001) substrate. We demonstrate that the β-FeSi2(100) plane is bonded to the Si(001) plane with two Si dimers per unit cell. With such interface structure, DFT band calculations reveal that metallic electronic states are localized at the interface. This finding implies the presence of two dimensional electronic states at the interface of β-FeSi2/Si(001),

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: interface structure, STM, DFT, band structure, β-FeSi2, STEM

刊行年月日: 2024-10-22

出版者: Elsevier BV

掲載誌:

• Applied Surface Science (ISSN: 01694332) vol. 682 161539

研究助成金:

• Japan Society for the Promotion of Science 17K04985
• Japan Society for the Promotion of Science 22K04860

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4919

公開URL: https://doi.org/10.1016/j.apsusc.2024.161539

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更新時刻: 2024-11-06 11:19:14 +0900

MDRでの公開時刻: 2026-10-23 02:59:55 +0900