Dhruba B. Khadka
(National Institute for Materials Science
)
;
Yasuhiro Shirai
(National Institute for Materials Science
)
;
Masatoshi Yanagida
(National Institute for Materials Science
)
;
James W. Ryan
;
Kenjiro Miyano
(National Institute for Materials Science
)
説明:
(abstract)We found that PTAA device leads to the improvement in interface layer quality, efficient carrier transport and mitigation of bulk defect activities. The analysis of temperature and intensity dependent current–voltage characteristics suggests that PEDOT:PSS device is
limited by interface and trap assisted recombination. The capacitance spectroscopy and electroluminescence revealed soothing of recombination activities as a consequence of better interface quality and shallower defect level for PTAA device. Our results consolidate that the perovskite film and interface quality and recombination activities in device are dominantly influenced by HTLs which pave a way for further enhancement in efficiency coupled with excellent interfacial carrier transport layer.
権利情報:
キーワード: Perovskite, Carrier transport, Defect state, Interface quality, Recombination
刊行年月日: 2017-08-08
出版者: Royal Society of Chemistry (RSC)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5126
公開URL: https://doi.org/10.1039/c7tc02822a
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-12-10 16:55:52 +0900
MDRでの公開時刻: 2024-12-10 16:55:52 +0900
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JMCC-Authors Accepted version.pdf
(サムネイル)
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サイズ | 980KB | 詳細 |