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説明:

Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral
cathodoluminescence spectroscopy. The dislocations are associated with a reduction of
self-trapped hole-related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting an increase in donor–acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Ga2O3, dislocation

刊行年月日: 2025-01-20

出版者: IOP Publishing

掲載誌:

• Journal of Physics D: Applied Physics (ISSN: 00223727) vol. 58 issue. 3

研究助成金:

• Engineering and Physical Sciences Research Council EP/K011952/1

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/1361-6463/ad8894

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更新時刻: 2024-11-13 08:31:40 +0900

MDRでの公開時刻: 2024-11-13 08:31:40 +0900