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説明:

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation.The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors

刊行年月日: 2023-11-08

出版者: MDPI AG

掲載誌:

• Micromachines (ISSN: 2072666X) vol. 14 issue. 11 p. 2076-2076

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3390/mi14112076

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更新時刻: 2024-01-05 22:11:33 +0900

MDRでの公開時刻: 2023-11-13 13:30:12 +0900