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説明:

Germanium Monosulfide (GeS) is a semiconducting 2D material that shows significant promise for use in logic devices due to its high carrier mobility and direct band gap. However, thickness-controlled and industry compatible synthesis of crystalline GeS is yet to be realized. In this study, by utilizing RF plasma cracking for sulfur during film synthesis, the in-plane on-insulator crystallization of GeS from sub-100 nm amorphous germanium-sulfur films can be realized via atmospheric pressure annealing at 400 °C. The effect of plasma power on molecular-beam deposited films is more finely investigated, revealing a positive trend between plasma power and film sulfur incorporation and thickness and increases in crystallization-inhibiting film sp3 behavior are noticed at plasma powers beyond 61W.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adf8f8.

キーワード: germanium sulfide

刊行年月日: 2025-09-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 9

研究助成金:

• JSPS JP20K14796 (科研費若手研究)
• JSPS JP21H04642 (科研費基盤A)
• JSPS JP23K13370 (科研費若手研究)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5817

公開URL: https://doi.org/10.35848/1347-4065/adf8f8

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更新時刻: 2025-10-16 16:51:55 +0900

MDRでの公開時刻: 2026-09-05 08:25:03 +0900