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説明:

Transition metal dichalcogenides (TMDs) have been attracted increasingly attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif bandgap, and phase transition ability. Even though TMDs own a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With the modifying properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Langmuir, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.langmuir.3c02929

キーワード: Nanoarchitectonics, Transition-metal dichalcogenides

刊行年月日: 2023-12-19

出版者: American Chemical Society (ACS)

掲載誌:

• LANGMUIR (ISSN: 07437463) vol. 39 issue. 50 p. 18175-18186

研究助成金:

• JSPS JP22F22368 (熱で充電できるスーパーキャパシタ：セルフパワーエネルギー貯蔵デバイス)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4354

公開URL: https://doi.org/10.1021/acs.langmuir.3c02929

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更新時刻: 2024-12-04 14:53:12 +0900

MDRでの公開時刻: 2024-12-04 14:53:12 +0900