Ziyang Gan
;
Ioannis Paradisanos
;
Ana Estrada‐Real
;
Julian Picker
;
Emad Najafidehaghani
;
Francis Davies
;
Christof Neumann
;
Cedric Robert
;
Peter Wiecha
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Xavier Marie
;
Johannes Biskupek
;
Manuel Mundszinger
;
Robert Leiter
;
Ute Kaiser
;
Arkady V. Krasheninnikov
;
Bernhard Urbaszek
;
Antony George
;
Andrey Turchanin
説明:
(abstract)One-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermo- dynamic-equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton– phonon coupling and enable an exciton g-factor of −3.3.
権利情報:
キーワード: Chemical vapor deposition, Janus SeMoS, exciton-phonon coupling
刊行年月日: 2022-08-21
出版者: Wiley
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1002/adma.202205226
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-26 08:30:46 +0900
MDRでの公開時刻: 2025-02-26 08:30:46 +0900
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Advanced Materials - 2022 - Gan - Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition.pdf
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