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WO3 epitaxial films with the same thickness and in-plane crystal grain size were prepared using pulsed laser deposition with various Si contents in the target to clarify the effect of Si addition to WO3 on the gas sensing properties. X-ray diffraction measurements indicated that the films grown on the (1102) face of sapphire had a (001) orientation with in-plane epitaxial relationships of [110]WO3//[0111] or [110]WO3//[2110]Al2O3, regardless
of the Si content. Scanning probe microscopy observations revealed that particles with a diameter of several tens of nanometers grow on the surface of the Si-doped WO3 film. Measurements of the gas response to ethanol and acetone showed superior gas selectivity towards acetone gas at low temperatures, which is due to the catalytic effect of SiOx particles on the film surface.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Tungsten trioxide, Epitaxial film, Si doping, Acetone, Ethanol, Gas selectivity

刊行年月日: 2024-05-01

出版者: Ceramic Society of Japan

掲載誌:

• Journal of the Ceramic Society of Japan (ISSN: 13486535) vol. 132 issue. 5 p. 227-231 23121

研究助成金:

• JSPS 21K04647

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.2109/jcersj2.23121

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更新時刻: 2024-05-24 12:30:24 +0900

MDRでの公開時刻: 2024-05-24 12:30:25 +0900