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Xiaolu Yuan, Jinlong Liu, [Jiangwei Liu](https://orcid.org/0000-0003-2580-7401), Junjun Wei, Liangxian Chen, Chengming Li

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[The graphene-on-diamond structure with Ni-catalyzed under high temperature](https://mdr.nims.go.jp/datasets/f25f21cd-83be-4d3d-9ee5-35d7169946cb)

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The graphene-on-diamond structure with Ni-catalyzed under high temperatureScience Talks 8 (2023) 100277Contents lists available at ScienceDirectScience Talksj ourna l homepage: www.e lsev ie r .es /scta lkThe graphene-on-diamond structure with Ni-catalyzed underhigh temperatureXiaolu Yuan a, Jinlong Liu a, Jiangwei Liu b, Junjun Wei a, Liangxian Chen a, Chengming Li a,⁎a University of Science and Technology Beijing, No. 30, Xueyuan Road, Haidian Distrct, Beijing 100083, Chinab National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan⁎ Corresponding author.E-mail address: chengmli@mater.ustb.edu.cn (C. Li).Fig. 1. Schematic diagram of GOD structure fhttp://dx.doi.org/10.1016/j.sctalk.2023.100277Received 5 December 2022; Received in revised formAvailable online xxxx2772-5693/© 2023 The Authors. Published by ElseviA B S T R A C TA R T I C L E I N F OKeywords:DiamondGrapheneNiP-typeN-typeGraphene-on-diamond (GOD) composite structure has been attracting considerable attention due to the unique fea-tures for all carbon sp3-sp2 electronic applications. Whereby the electrical properties of diamond surface can be pur-posely tailored and significantly altered through transformed graphene layers. In this work, graphene-on-diamondcomposite structures were prepared by nickel-catalyzed high-temperature rapid annealing, and were analyzed byRaman, Hall effect measurement and Transmission electron microscopy (TEM). The results show that the differencein surface conductivity of graphene-on-diamond composite structure is mainly related to the number of transformedgraphene layers, while the number of layers is mainly affected by annealing time and the thickness of nickel film.Hall measurement and TEM results show that when the transformed graphene becomes graphite with a lot of Niatoms embedded into diamond, the surface carriers of graphene-on-diamond composite structure are electrons. Onthe contrary, when the transformed graphene is about 3 or 5 layers, the surface carriers are holes. These findingsmay provide a route for graphene-on-diamond structure to become a strong candidate for next generation complemen-tary diamond electronic devices.Video and Presentation to this article can be found online at https://doi.org/10.1016/j.sctalk.2023.100277.Figures and tables.abrication. (a) DC arc jet plasma equipment (b) Flow chart (c) Hall measurement using Van der Paw method.27 April 2023; Accepted 11 October 2023er Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).https://doi.org/10.1016/j.sctalk.2023.100277https://doi.org/10.1016/j.sctalk.2023.100277http://dx.doi.org/10.1016/j.sctalk.2023.100277mailto:chengmli@mater.ustb.edu.cnhttp://dx.doi.org/10.1016/j.sctalk.2023.100277http://creativecommons.org/licenses/by/4.0/http://www.sciencedirect.com/science/journal/www.elsevier.es/sctalkX. Yuan et al. Science Talks 8 (2023) 100277Table 1Hall measurements of GOD structure with different Ni thickness under 800 °C for 1.5 min.Ni thickness(nm)1125891122HCSheet resistance (Ω/□)Fig. 2. Raman spectrumSheet concentration(cm−2)of GOD structure. (a) p-ty2Hall mobility(cm2V−1 s−1)pe (b) n-type.Conductivity type0 ∼108 – – –5 ∼104 ∼1013 29 p5 ∼104 ∼1013 19 p0 1.0 ∼1016 84 n00 1.0 ∼1016 67 n1Table 2Hall measurements of GOD structure under different annealing temperature with 40 nm Ni film for 1.5 min.Temperature(°C)Sheet resistance (Ω/□) Sheet concentration(cm−2)Hall mobility(cm2V−1 s−1)Conductivity type00 ∼102 ∼1014 114 p00 ∼103 ∼1014 15 n/p000 1.2 ∼1016 345 n1Table 3Hall measurements of GOD structure under different annealing time with 40 nm Ni film at 800 °C.Time(min)Sheet resistance (Ω/□) Sheet concentration(cm−2)Hall mobility(cm2V−1 s−1)Conductivity type.0 ∼104 ∼1012 37 p.5 ∼103 ∼1013 33 p.0 ∼103 ∼1012 53 p.5 ∼102 ∼1014 55 p.0 ∼103 ∼1013 82 p3Table 4Hall measurements of GOD structure under different diamond substrate with 40 nm Ni film at 800 °C for 1.5 min.Diamond substrate Sheet resistance (Ω/□) Sheet concentration(cm−2)Hall mobility(cm2V−1 s−1)Conductivity typeTHP Diamond ∼104 ∼1013 37 pVD Diamond ∼104 ∼1011 380 pPL Diamond ∼104 ∼1012 154 pEFig. 3. XPS Spectrum of p-type GOD structure. (a) Survey (b) C1s (c) O1s (d) Ni2p.Fig. 4. XPS Spectrum of n-type GOD structure. (a) Survey (b) C1s (c) O1s (d) Ni2p3/2.X. Yuan et al. Science Talks 8 (2023) 1002773Fig. 5.TEM images and EELS spectrums of p-typeGOD structure. (a) ADF image for line scan (b) HRTEM image (c) Zoom-in area (d) EELS line scan spectrum (e) Low loss of CK edge (f) High loss of C K edge.Fig. 6. TEM images and EELS spectrums of n-type GOD structure. (a) ADF image for line scan (b) and (c) HRTEM images (d) Zoom-in area (e) EELS line scan spectrum (f) Lowloss of C K edge (g) High loss of C K edge.X. Yuan et al. Science Talks 8 (2023) 1002774X. Yuan et al. Science Talks 8 (2023) 100277CRediT authorship contribution statementXiaolu Yuan: Data curation, Writing – original draft. Jinlong Liu:Methodology. Jiangwei Liu: Visualization, Investigation. JunjunWei: Su-pervision. Liangxian Chen:Validation. Chengming Li: Conceptualization.Data availabilityData will be made available on request.AcknowledgmentsFunding: This work was supported by the National High-levelUniversity-sponsored Graduate Program of China Scholarship Council(CSC).Declaration of interestsThe authors declare that they have no known competing financial inter-ests or personal relationships that could have appeared to influence thework reported in this paper.Further reading[1] J. Yu, G. Liu, A.V. Sumant, et al., Graphene-on-diamond devices with increased current-carrying capacity: carbon sp2-on-sp3 technology[J], Nano Lett. 12 (3) (2012) 1603–1608,https://doi.org/10.1021/nl204545q.[2] K. Bu, J.T. Wang, H. Weng, et al., Topological semimetal in an sp2-sp3 hybridized carbonnetwork with nodal rings [J], Phys. Rev. B 101 (20) (2020), 205104, https://doi.org/10.1103/PhysRevB.101.205104.[3] Y. Ge, K. Luo, Y. Liu, et al., Superconductivity in graphite-diamond hybrid [J], Mater.Today Phys. 23 (2022), 100630, https://doi.org/10.1016/j.mtphys.2022.100630.[4] Y. Liu, L. Qiu, J. Liu, et al., Enhancing thermal transport across diamond/grapheneheterostructure interface [J], Int. J. Heat Mass Transf. 209 (2023), 124123, https://doi.org/10.1016/j.ijheatmasstransfer.2023.124123.[5] Y. Song, W. Zou, Q. Lu, et al., Graphene transfer: paving the road for applications ofchemical vapor deposition graphene [J], Small 17 (48) (2021) 2007600, https://doi.org/10.1002/smll.202007600.[6] J.M. Garcia, R. He, M.P. Jiang, et al., Multilayer graphene grown by precipitation uponcooling of nickel on diamond [J], Carbon 49 (3) (2011) 1006–1012, https://doi.org/10.1016/j.carbon.2010.11.008.[7] S. Kanada, M. Nagai, S. Ito, et al., Fabrication of graphene on atomically flat diamond(111) surfaces using nickel as a catalyst [J], Diam. Relat. Mater. 75 (2017) 105–109,https://doi.org/10.1016/j.diamond.2017.02.014.Xiaolu Yuan received the B.S. degree in Inorganic Non-metallicMaterials Engineering from Yanshan University, Qinhuangdao,China, in 2016. She is currently working toward the Ph.D. de-gree in Materials Science and Engineering with the Institutefor Advanced Materials and Technology, University of Scienceand Technology Beijing, Beijing, China. Her research interestsinclude the fabrication of diamond, graphene and diamond-based MOSFET.Jinlong Liuwas born in 1985, doctor of engineering, associateprofessor. He graduated from the Harbin Engineering Univer-sity with a bachelor in 2007. In 2009, he received a master de-gree in materials science from Harbin Institute of Technology.In 2013, he got a doctor degree in materials science and engi-neering from Beijing University of Science and Technology. In2014, he joined Institute of Advanced Materials and Technol-ogy, University of Science and Technology Beijing. His researchnow mainly focuses on the synthesis and application of carbonmaterials and other functional films. From 2017 to 2018, as avisiting scholar, he visited Argonne National Laboratory inUSA, andworked on the diamond based electronic devices with2-dimensional layer passivation. He has authored over 80 peer-reviewed carbon related publications and 20 authorized pat-ents. He has been awarded the Technical Invention ofMinistry of Education of the People's Re-public of China and Provincial Awards on Technology Advancement.5Dr. Jiangwei Liu is currently a senior research at Next-generation Semiconductor Group of National Institute forMaterials Science (NIMS), Japan. He received his Ph. D de-gree from the University of Tokyo in 2012. He worked as apostdoctoral researcher at Wide Bandgap Materials groupof NIMS from 2012 to 2013 and as an independent ICYS re-searcher at International Center for Young Scientists ofNIMS from 2014 to 2016. From Oct. 2016, he became a ten-ured Independent Scientist at NIMS. He is an elected personof MEXT-LEADER (Leading Initiative for ExcellentYoung Researchers) Program in 2016, NIMS-ICYS Pro-gram in 2014, and JSPS-GCOE (Global Centers of Excel-lence) Program in 2009. He is presently interested insingle crystalline diamond growth and diamond electronicdevices. He has authored and co-authored over 70 Journal publications and threeJapanese Patent.Dr. JunjunWei, is professor ofMaterial Science atUniversity ofScience and Technology Beijing, China. He is the deputy direc-tor of the Functional Materials Research Institute, in Institutefor Advanced Materials and Technology. He received his PhDdegree from University of Science and Technology Beijing is2009. In recent 5 years (2017–2022), as the principal investiga-tor (PI), Professor Wei undertaken a number of national gradeprojects and enterprise projects. He has mainly engaged in thefabrication and application of large scale CVDdiamond.He pub-lished more than 50 international academic papers, which arerelated to CVDdiamondfilm, and obtainedmore than 10 autho-rized Chinese patents and several prizes in the recent 5 year (h-index: 15).Dr. LiangxianChen is a senior engineering from Institute ofAd-vanced Materials and Technology, University of Science andTechnology Beijing. He graduated from the Qingdao Universityof Science and Technologywith a bachelor in 2005. In 2007 and2013, he received the master degree and doctor degree inmate-rials science and engineering from Beijing University of Scienceand Technology, respectively. He was a short-term visitingscholar at Texas A&M University in 2011. From 2013 to 2015,as a postdoctoral fellow, he worked in School of Metallurgicaland Ecological Engineering, University of Science and Technol-ogy Beijing. In 2015, he joined Institute of Advanced Materialsand Technology, University of Science and Technology Beijing.His research now mainly focuses on the synthesis and applica-tion of diamond material and other functional films.Prof. Chengming Li is now the director of Carbon-Based Mate-rials and Functional Films Laboratory at University of Scienceand Technology Beijing (USTB). He has engaged in diamondmaterial research for more than 30 years, and developed theDC arc-jet plasma technology for large-size, crack-free, ultra-thick diamond plate deposition as well as microwave plasmatechnical equipment. His group firstly reported the electronicstudy of polycrystal & single crystal diamond in China. Andtheir researches of the thermal application of diamond filmare at the advanced level all around the world, which also pro-moted the industrial application of CVD free-standing diamondfilms.Prof. Li has directed or was involved in more than 30 mainprojects, including the National Science and Technology MajorProject (sub-project), National Key Research and Development Program of China, Interna-tional Intergovernmental Cooperation Project (EU Horizon 2020), National “863” project, Na-tional Natural Science Foundation of China, etc. He is also currently served as the executivefellowof ChinaHeat Treatment Association (CHTA), the fellow of the Pan-pacific InternationalR&D and Industry Alliance of Single Crystal Diamond and Electronic Device, as well as the fel-low of China Technical Committee for Standardization of Abrasive Engineering. At the sametime, he has acted as associate editor of journals such as Frontiers in Carbon, Functional Dia-mond, and he also has joined the Editorial Board or Editor-in-Chief of special issue in severalinternational journals. To date, he has authored over 300 peer-reviewed carbon related publi-cations, 70 authorized patents, and participated in the compilation of 4 monographs.He has been the recipient of various awards and recognitions. The research project of massproduction of thermal-conductive diamond plate, which he mainly directed, has been success-fully applied in the “BEIDOU” satellites and the “LongMarch-7” carrier rocket. This applicationmilestone of the CVD diamond has been nominated by Ministry of Education of the People'sRepublic of China with the First-class of Technical Invention Award. Meanwhile, he has alsoawarded by 3 Ministerial or Provincial-level Awards on Technology Advancement.https://doi.org/10.1021/nl204545qhttps://doi.org/10.1103/PhysRevB.101.205104https://doi.org/10.1103/PhysRevB.101.205104https://doi.org/10.1016/j.mtphys.2022.100630https://doi.org/10.1016/j.ijheatmasstransfer.2023.124123https://doi.org/10.1016/j.ijheatmasstransfer.2023.124123https://doi.org/10.1002/smll.202007600https://doi.org/10.1002/smll.202007600https://doi.org/10.1016/j.carbon.2010.11.008https://doi.org/10.1016/j.carbon.2010.11.008https://doi.org/10.1016/j.diamond.2017.02.014 The graphene-�on-�diamond structure with Ni-�catalyzed under high temperature CRediT authorship contribution statement section2 Acknowledgments Declaration of interests Further reading