# Fileset

[AlN_JJAP_240807-revised.docx](https://mdr.nims.go.jp/filesets/f559564b-f087-4560-afb8-b474fa1d9556/download)

## Creator

[Hironori Okumura](https://orcid.org/0000-0002-5464-9169), [Masataka Imura](https://orcid.org/0000-0002-4236-9549), Fuga Miyazawa, Lorenzo Mainini

## Rights

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad7dc3.[Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International](https://creativecommons.org/licenses/by-nc-nd/4.0/)

## Other metadata

[Fully vertical AlN-on-SiC Schottky barrier diodes](https://mdr.nims.go.jp/datasets/4a1984aa-0624-4cb2-bc36-b9e44ac34764)

## Fulltext