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[Thang Dinh Phan](https://orcid.org/0000-0002-2446-0453), [Shunsuke Tsuda](https://orcid.org/0000-0001-6209-8048), Riku Goto, [Naoka Nagamura](https://orcid.org/0000-0002-7697-8983), [Ovidiu Cretu](https://orcid.org/0000-0002-1822-8172), [Koji Kimoto](https://orcid.org/0000-0002-3927-0492), [Koichiro Yaji](https://orcid.org/0000-0002-0721-1316)

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[Structural and electronic properties of transferred graphene on yttrium iron garnet (111)](https://mdr.nims.go.jp/datasets/b0ec4463-7c67-4437-a382-fc461b7722b8)

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Structural and electronic properties of transferred graphene on yttrium iron garnet (111)ViewOnlineExportCitationRESEARCH ARTICLE |  AUGUST 11 2025Structural and electronic properties of transferred grapheneon yttrium iron garnet (111)Thang Dinh Phan  ; Shunsuke Tsuda; Riku Goto; Naoka Nagamura  ; Ovidiu Cretu  ; Koji Kimoto  ;Koichiro Yaji  J. Appl. Phys. 138, 064301 (2025)https://doi.org/10.1063/5.0283562Articles You May Be Interested InReactive intercalation and oxidation at the buried graphene-germanium interfaceAPL Mater. (July 2019)Discrete mobility-spectrum analysis and its application to transport studies in HgCdTeJ. Appl. Phys. (October 2022)Temperature dependence of the picosecond spin Seebeck effectAppl. Phys. Lett. (July 2021)  11 August 2025 22:15:32https://pubs.aip.org/aip/jap/article/138/6/064301/3358333/Structural-and-electronic-properties-ofhttps://pubs.aip.org/aip/jap/article/138/6/064301/3358333/Structural-and-electronic-properties-of?pdfCoverIconEvent=citejavascript:;https://orcid.org/0000-0002-2446-0453javascript:;javascript:;javascript:;https://orcid.org/0000-0002-7697-8983javascript:;https://orcid.org/0000-0002-1822-8172javascript:;https://orcid.org/0000-0002-3927-0492javascript:;https://orcid.org/0000-0002-0721-1316https://crossmark.crossref.org/dialog/?doi=10.1063/5.0283562&domain=pdf&date_stamp=2025-08-11https://doi.org/10.1063/5.0283562https://pubs.aip.org/aip/apm/article/7/7/071107/122478/Reactive-intercalation-and-oxidation-at-the-buriedhttps://pubs.aip.org/aip/jap/article/132/15/155702/2837693/Discrete-mobility-spectrum-analysis-and-itshttps://pubs.aip.org/aip/apl/article/119/3/032401/41776/Temperature-dependence-of-the-picosecond-spinhttps://e-11492.adzerk.net/r?e=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&s=skGUEDyXeLvHZmODnNbJ9uCSjVwStructural and electronic properties oftransferred graphene on yttrium iron garnet (111)Cite as: J. Appl. Phys. 138, 064301 (2025); doi: 10.1063/5.0283562View Online Export Citation CrossMarkSubmitted: 2 June 2025 · Accepted: 19 July 2025 ·Published Online: 11 August 2025Thang Dinh Phan,1 Shunsuke Tsuda,1 Riku Goto,1,2 Naoka Nagamura,1,2 Ovidiu Cretu,1 Koji Kimoto,1and Koichiro Yaji1,3,a)AFFILIATIONS1Center for Basic Research on Materials, National Institute for Materials Science, Tsukuba 305-0003, Japan2Faculty of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo3Unprecedented-scale Data Analytics Center, Tohoku University, Sendai 980-8578, Japana)Author to whom correspondence should be addressed: yaji.koichiro@nims.go.jpABSTRACTGraphene fabricated on magnetic insulators holds great potential for developing novel functional materials and applications in spintronicsdevices. In the present study, we have investigated the structural and electronic properties of transferred single-layer graphene (SLG) on theyttrium iron garnet (111) [YIG(111)] substrate. Here, spin polarization in SLG/YIG(111) is reported in the previous study. Our angle-resolved photoemission spectroscopy visualizes the electronic band structure of SLG/YIG(111) and demonstrates an intact Dirac band withp-type doping in SLG/YIG(111). Therefore, based on a collaborative consideration of the previous and present studies, we conclude that thespin-polarized Dirac electrons exist in SLG/YIG(111).© 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0283562I. INTRODUCTIONGraphene exhibits remarkable characteristics, includingextraordinary mechanical properties,1 excellent electronictransport,2–5 long spin diffusion lengths,6–12 significant quantumphenomena such as the quantum Hall effect (QHE),13–19 and thequantum spin Hall effect (QSHE).6,19–26 These characteristics makegraphene an ideal material for developing next-generation spin-tronics devices. One of the key goals in designing graphene spin-tronics devices is to induce and control spin polarization in theconducting electrons. The electronic state of pure graphene isinherently non-magnetic. This property can be modified withdoping, such as mixing graphene with magnetic nanoparticles,26–28synthesizing magnetic materials on graphene,29,30 or modifyingthem with covalent bonds.31,32 However, the doping processes canaffect the specific electronic properties of graphene. One of thechallenges is to induce spin polarization in graphene while main-taining the Dirac electronic state.Graphene grown on an yttrium iron garnet (YIG) substratehas attracted much attention because its unique electronic transportproperties are preserved even under magnetic proximity effects,without introducing unwanted disturbances to the graphene latticeor charge transport characteristics.33–36 Here, the YIG is a magneticinsulator capable of inducing spin alignment in adjacent conductivelayers while remaining electrically insulating. Accordingly, gra-phene/YIG heterostructures are regarded as promising platformsfor inducing spin polarization in graphene via magnetic proximityeffects, without relying on direct spin injection. This nonchemicalspin interaction enables the preservation of graphene’s intrinsicband structure, in contrast to direct coupling with ferromagneticmetals, which often modifies the band structure and degrades itselectronic performance. As a result, graphene/YIG heterostructuresprovide a viable route for realizing graphene-based spintronicdevices, including spin field-effect transistors (FETs). Remarkably,a significant spin asymmetry (>10%) is demonstrated in theSLG/YIG heterostructure at the Fermi level (EF).37 We notehere that it is important to verify whether the Dirac band is modi-fied by the interaction between graphene and the substrate.However, the study of the spin polarization in Ref. 37 employed awave-number-integrated technique. Thus, the band structure,essential to understanding the functions of the materials, has yet tobe clarified.Journal ofApplied PhysicsARTICLE pubs.aip.org/aip/japJ. Appl. Phys. 138, 064301 (2025); doi: 10.1063/5.0283562 138, 064301-1© Author(s) 2025 11 August 2025 22:15:32https://doi.org/10.1063/5.0283562https://doi.org/10.1063/5.0283562https://pubs.aip.org/action/showCitFormats?type=show&doi=10.1063/5.0283562http://crossmark.crossref.org/dialog/?doi=10.1063/5.0283562&domain=pdf&date_stamp=2025-08-11https://orcid.org/0000-0002-2446-0453https://orcid.org/0000-0002-7697-8983https://orcid.org/0000-0002-1822-8172https://orcid.org/0000-0002-3927-0492https://orcid.org/0000-0002-0721-1316mailto:yaji.koichiro@nims.go.jphttps://creativecommons.org/licenses/by/4.0/https://creativecommons.org/licenses/by/4.0/https://doi.org/10.1063/5.0283562https://pubs.aip.org/aip/japThe electronic band structure of graphene can be explained bythe tight-binding model.38,39 Angle-resolved photoemission spec-troscopy (ARPES) offers experimental visualization of the bandstructure of graphene. The electronic structure of graphene consistsof two electron bands originating from σ and π bonds. The π elec-trons form a Dirac band with linear dispersion, and the valenceand conduction bands cross at the K point in the Brillouin zone(BZ); this crossing point is known as the Dirac point. In free-standing graphene, the charge-neutral point is located at the EF. Onthe other hand, when a substrate exists, electrons or holes aredoped from the substrate into the graphene due to charge transfer,thereby modifying the energy of the charge-neutral point. In otherwords, the electronic state and the electrical conductivity of gra-phene can be controlled by tuning the doping. Carrier doping intothe graphene’s Dirac band is crucial for designing devices based onband engineering because the novel transport properties above arederived from the linear dispersion of the electrons at EF. Forexample, in graphene on a SiC(0001) substrate,40,41 the Dirac bandshifts to the higher binding energy side due to electron transfer,resulting in n-type Dirac carriers. It has been reported that theDirac band with p-type doping is realized by the adsorption ofO2/water molecules on graphene on SiO2/Si.42,43 In this case, thelinear dispersion is maintained. There are also cases, such as gra-phene on Au-doped SiC (0001) and graphene on Bi-doped Ir(111),where the linear dispersion is broken and the bandgap opens at theDirac point.44,45In the present study, we have investigated the structural andelectronic properties of SLG transferred onto YIG(111) [SLG/YIG(111)] using micro-Raman spectroscopy, transmission electronmicroscopy (TEM), and ARPES. TEM measurements show thatour SLG has a multi-domain structure. The ARPES measurementsvisualize the band structure of SLG/YIG. We demonstrate that theintact Dirac band exists on the YIG(111) substrate. We also showthat the energy of the Dirac point is located above the EF, meaningthat the Dirac band is doped with p-type.II. EXPERIMENTAL METHODSWe used commercially available SLG manufactured byGraphenea, Inc. The SLG was transferred onto the surface of theYIG thin film, as described elsewhere.46,47 We used a commercialYIG(111) thin film, which was epitaxially grown on a gadoliniumgallium garnet (GGG) single crystal.Micro-Raman spectroscopy was utilized to characterize gra-phene in the SLG/YIG(111) heterostructure. In the Raman mea-surements, we used a green laser with a wavelength of 532 nm. Thescanning range was conducted in a wide frequency range, from∼100 to ∼3000 cm−1, to ensure that the full range, including theRaman spectra of the YIG, was observed. The measurements wereperformed at room temperature.In the TEM experiments, we aim to confirm the quality of thecommercial SLG. The samples for TEM were different from thosefor ARPES, but they were obtained from the same batch. A free-standing SLG was initially transferred to a lacey carbon TEM gridmade of molybdenum. Following the transfer, the sample wasannealed at 450 °C in a high-vacuum chamber for 2 h. The clean,annealed sample was then placed on the stage of the TEM, whereexperiments were conducted using a Thermo Fisher ScientificTitan operated at an acceleration voltage of 80 kV in scanningtransmission electron microscopy (STEM) mode, with a probecurrent of ∼30 pA. The experiments were carried out using twoobservation modes: (i) high-resolution TEM operation with a beamconvergence of approximately 20 mrad, which provides a standardTEM image, and (ii) diffraction mapping with a beam convergenceof about 1 mrad, which yields the orientation map of the free-standing graphene.The photoemission electron microscopy (PEEM) and ARPESmeasurements were conducted at the National Institute forMaterials Science (NIMS).47,48 For the PEEM measurements, themercury lamp with a photon energy of 5.2 eV was used as the exci-tation light source. The helium discharge lamp with a photonenergy of 21.2 eV (He I) was used for ARPES. The base pressure ofthe analysis chamber is maintained at approximately 1.5 × 10−8 Pa.The sample temperature was set to 40 K for both measurements.III. RESULTS AND DISCUSSIONRaman spectroscopy is helpful in identifying the number oflayers in graphene films due to its unique Raman signals, specifi-cally the G band and the 2D band. The G band results from thein-plane vibrations of sp²-bonded carbon atoms. In contrast, the2D band arises from a two-phonon process that involves two inter-valleys scattering between the equivalent high-symmetry points, Kand K 0, in a BZ.49–51 The 2D band intensity significantly dependson the number of graphene layers. Therefore, we can assess thenumber of graphene layers by analyzing the intensity ratio betweenthe 2D band and the G band.52Figure 1(a) shows an optical image of SLG/YIG(111), inwhich we can recognize that the sample surface is almost homoge-neous. Figure 1(b) is a Raman mapping of the 2D peak intensity ofthe graphene over a 50 × 30 μm2 area. The mapping was performedfrom a 2D peak area with starting and finishing points at 1640 and1712 cm−1, respectively. The background of the mapping isremoved using the vector transformation penalized spline(VTPspline) method.53 The Raman spectra taken at #1–#3 areexhibited in Fig. 1(c). The Raman spectrum in #1 is predominantlycontributed by peaks in the region of 100–1500 cm−1, which areRaman scattering of YIG as detailed in Refs. 54 and 55, while thepeak at ⁓1580 cm−1 (G band) and ⁓2700 cm−1 (2D band) of gra-phene is not observed. On the other hand, the G and 2D bandsappear in #2 and #3. In #2, the G (2D) band with a center peak at⁓1581 cm−1 (⁓2675 cm−1) appears. For the Raman spectrum in#3, we find the G and 2D bands at ⁓1579 and ⁓2693 cm−1,respectively.We here mention three reasons why area #2 in Fig. 1(b) corre-sponds to SLG. The first reason is the intensity ratio between the2D band and the G band. In the case of SLG, the intensity of the2D band is substantially higher than that of the G band, wherethe intensity ratio is more than 2.56–58 In Fig. 1(c), the Raman spec-trum observed in #2 shows an intensity ratio of around 2.4. On theother hand, in the Raman spectra taken in #3, the intensity ratio is1.3. This indicates that the gray areas in Fig. 1(b), including region#2, represent SLG, while the white areas, including region #3, repre-sent multilayer graphene. The second reason is based on theJournal ofApplied PhysicsARTICLE pubs.aip.org/aip/japJ. Appl. Phys. 138, 064301 (2025); doi: 10.1063/5.0283562 138, 064301-2© Author(s) 2025 11 August 2025 22:15:32https://pubs.aip.org/aip/japwavenumber position of the 2D band in relation to the incidentphoton energy. For single-layer graphene, the peak center of the2D band is approximately 2685 cm−1 for a laser wavelength of514 nm and about 2640 cm−1 for a wavelength of 633 nm, asshown in a previous study.50 In our case, we utilize a laser wave-length of 532 nm. Therefore, the peak center of the 2D band(2675 cm−1) for single-layer graphene should appear in the rangeof 2640–2685 cm−1, which well explains the experimental results.The significant shift of the 2D peak at approximately 18 cm−1 is animportant change, which is the third reason. This is consistent withthe assumption that they correspond to SLG and multilayergraphene.50Figure 2(a) shows a TEM image of SLG from the same batchas SLG used to transfer onto YIG(111). In the image, the gray areasrepresent the suspended SLG, and the intensity of the contrastcolor indicates the number of graphene layers. The white structuresrepresent the amorphous carbon mesh used to support the SLG onthe TEM grid. The darkest area on the left side indicates theholding section without graphene. The atomic resolution image inFig. 2(b) demonstrates the high quality of our sample.Figure 2(c) presents a histogram illustrating the distribution ofsingle-layer, bilayer, and trilayer regions, along with defects such asfolds and metal particles, as identified in Fig. 2(a). The histogramindicates that the SLG region occupies a significant portion of thearea, comprising approximately 70%. In comparison, bilayer andtrilayer graphene account for 20% of the area. The TEM resultsserve as a third reason, alongside the two reasons mentioned above,supporting the conclusion that our graphene transferred onto theYIG substrate is predominantly a homogeneous single layer.Therefore, the thickness of the graphene sheet is estimated to beapproximately 0.345 nm, which is consistent with Ref. 46.Figures 3(a) and 3(b) show the PEEM and ARPES intensitymapping at the constant binding energy of 0.2 eV, respectively. ThePEEM measurements are performed with a 48 μm field of view(FoV), as shown in Fig. 3(a). The white spots can be contaminants,FIG. 1. (a) Optical image and (b) Raman mapping of the 2D peak intensity of thegraphene over a 50 × 30 μm2 area of SLG/YIG(111). (c) Raman spectra obtainedfrom #1 to #3 in (b). (d) The G and 2D band regions expanded from (c).FIG. 2. (a) TEM image of our SLG. The labels “1L,” “2L,” and “3L” correspondto one, two, and three layers of graphene, respectively. The labels “F” and “M”refer to folds in the graphene film and metal particles, respectively. (b) Atomicresolution image of the rectangular region in (a). (c) Histogram of the number oflayers of graphene.Journal ofApplied PhysicsARTICLE pubs.aip.org/aip/japJ. Appl. Phys. 138, 064301 (2025); doi: 10.1063/5.0283562 138, 064301-3© Author(s) 2025 11 August 2025 22:15:32https://pubs.aip.org/aip/japsuch as residual polymethyl methacrylate (PMMA) from thesample preparation process. The ARPES measurements werecarried out in this FoV. Figure 3(b) shows the constant energyARPES intensity mapping at the binding energy of 0.2 eV with theFoV of 5.01 Å−1. We find 12 prominent ARPES intensities wherethe angles between adjacent ones are ∼30°. In addition, there areweak ARPES signals between these main intensities. This suggeststhat our sample has a multi-domain structure in which the 30°rotated domain is the majority, but the minor domains are produc-ing weaker ARPES signals. Our sample is a commercial graphenesheet attributed to being grown on polycrystalline copper foil usingthe CVD technique and then transferred onto the YIG(111)/GGGsubstrate. During the CVD process, carbon atoms from the gassource (such as CH4) can initiate the growth of graphene at variouspoints on the copper surface, resulting in extremely small grapheneislands. Since graphene islands grow on different crystallographicorientations of copper grains, their aligned lattices with theirrespective underlying copper grains will have a rotational mismatchwhen they merge. This generates a complex rotational disorder inCVD-grown graphene sheets.59,60 The rotational mismatch of gra-phene grains can reduce the mobility of graphene electrons, leadingto multiple Dirac bands and broadening the band structure.61A double broadened Dirac band of CVD-grown graphene canbe observed in ARPES mapping due to the two orientationaldomain groups rotated by a maximum angle of 30° with respect toeach other, as demonstrated by Dabrowski et al.62 The broadeningof the observed Dirac band originates from the tiny orientationaldomains. In our case, graphene is grown using the CVD techniqueand then transferred onto the YIG substrate. The bilayer and tri-layer graphene identified in Fig. 2(a) also contributed to theARPES signal of the graphene on YIG(111).63 Using four-dimensional transmission electron microscopy (4D-STEM) (Fig. S1in the supplementary material), we confirmed that the graphenesheet comprises numerous grains. Therefore, the ARPES resultshown in Fig. 3(b) is reasonable compared with the 4D-STEMresults.Figure 4(a) shows the ARPES intensity of SLG/YIG(111) takenalong the ΓK direction. The Dirac band in the first BZ side isobserved due to the interference effect in the photoelectron emis-sion process. In graphene/graphite, the photoemission intensity iscombined by photoelectrons from A and B atoms in a unit cell.The ARPES intensity in the first BZ results from positive interfer-ence between the photoelectrons from the A and B atom groups,known as the Brillouin-zone-selection effect.64,65 We note that nobands derived from the YIG(111) substrate are observed near theEF because the YIG(111) is a ferromagnetic insulator with a moder-ate gap (2.8 eV).66 The momentum distribution curves (MDCs) aredisplayed in Fig. 4(b). Figure 4(c) expresses the peak positionsobtained from the MDCs. We find that the Dirac band of SLG/YIG(111) crosses the EF at 1.65 Å−1. This indicates that the Dirac pointis located above the Fermi level. As a reference, we show the peakposition of MDCs of the SLG/SiC data, which is backfolded at0.4 eV, indicating that the Dirac point is below the EF.In the previous study, it was demonstrated that spin polariza-tion is induced in the valence band near the EF in SLG/YIG(111)using spin-polarized metastable He atom deexcitation spectro-scopy.37 This experimental technique is extremely surface-sensitive;hence, the authors conclude that the Dirac electrons in grapheneare spin-polarized. However, the existence of the Dirac band in gra-phene on the YIG(111) substrate is unclear because metastablehelium scattering is a wave-number-integrated technique. Thus,one cannot rule out the possibility that the Dirac band has beenmodified due to the interaction between graphene and the YIGsubstrate. In addition, the existence of the electronic state derivedfrom the YIG(111) substrate near the Fermi level is also not men-tioned. To clarify this outstanding issue, the present study visual-izes the band structure of SLG/YIG(111) using ARPES anddemonstrates that an intact Dirac band exists in SLG/YIG(111). Onthe other hand, SLG on the YIG(111) substrate gives rise to theexchange interaction between the π electrons in graphene and thenearby spin-polarized 3d electrons of Fe in the YIG(111).34,37,67Based on the collaborative consideration of the previous andpresent studies, we conclude that spin-polarized Dirac electronsexist in SLG/YIG(111).In ideal free-standing graphene, the charge-neutral point, cor-responding to the Dirac point, is located at the EF.5,38,68 In previousFIG. 3. (a) PEEM image of SLG/YIG(111). (b) Constant energy ARPES inten-sity mapping at the binding energy of 0.2 eV.Journal ofApplied PhysicsARTICLE pubs.aip.org/aip/japJ. Appl. Phys. 138, 064301 (2025); doi: 10.1063/5.0283562 138, 064301-4© Author(s) 2025 11 August 2025 22:15:32https://doi.org/10.60893/figshare.jap.c.7937075https://pubs.aip.org/aip/japstudies, the Dirac cone of graphene reaches a lower position thanthe EF, such as SLG on Ni(111), Co(0001),69 and SiC(0001),70,71the electrons of the substrate material will transport to thegraphene, resulting in an n-type doping. On the other hand, wedemonstrate the p-type-doped Dirac band in SLG/YIG(111). Thep-type property of SLG/YIG(111) can be caused by the YIGsubstrate itself being p-type.72 The p-type doping in grapheneintroduces the following advantages: (i) Improved hole control,allowing more hole carriers to transfer to graphene FETs.73(ii) Facilitate the creation of p-n junctions in graphene-baseddevices, which are essential for diodes, transistors, and photovoltaicapplications, enhancing power efficiency.74,75 (iii) Enhanced opto-electronic performance: The p-type doping can enhance graphene’soptical absorption or emission characteristics, making it suitablefor photodetectors and light-emitting devices, and can improvecharge separation and transport, boosting device efficiency.74(iv) Enhancing stability and work function by aligning graphene’swork function with materials that require high-work-function elec-trodes, such as hole-injection layers in organic light-emittingdiodes or organic photovoltaics.77,78 (v) The p-type doping canmake graphene less reactive to certain environmental factors,enhancing the stability of devices.78 (vi) Tailored bandgap engi-neering: The p-type doping can assist in opening or modulatinggraphene’s bandgap, enabling its use in semiconductor-likeapplications.79,80IV. CONCLUSIONWe have investigated the structural and electronic propertiesof SLG/YIG(111) by micro-Raman spectroscopy, TEM, andARPES. The 12 prominent ARPES intensities were found from theFermi surface mapping, indicating that the major domains arerotated 30° relative to each other. In SLG/YIG(111), we have dem-onstrated that the Dirac band exhibits linear dispersion. In the pre-vious paper, spin polarization was observed in the valence bandnear the Fermi level.37 Therefore, we have concluded that the spin-polarized Dirac electrons exist in SLG/YIG(111). Furthermore, theDirac band is doped in the p-type in SLG/YIG(111). The SLG/YIG(111) can be a promising material for spintronics applications.SUPPLEMENTARY MATERIALSee the supplementary material for the results of 4D-STEMand ARPES for SLG on SiC(0001).ACKNOWLEDGMENTSThe authors thank Fumiya Arai for their technical support inARPES measurements. The present work is financially supportedby the Japan Society for the Promotion of Science KAKENHI(Grant Nos. JP21K04633, JP22H05145, JP24K01352, andJP24K08253); the Innovative Science and Technology Initiative forSecurity under Grant No. JPJ004596; ATLA, Japan; Iketani Scienceand Technology Foundation; and the JST, CREST, Japan underGrant No. JPMJCR2435.AUTHOR DECLARATIONSConflict of InterestThe authors have no conflicts to disclose.Author ContributionsThang Dinh Phan: Formal analysis (lead); Investigation (lead);Visualization (lead); Writing – original draft (lead). ShunsukeTsuda: Investigation (supporting); Validation (supporting);Writing – review & editing (supporting). Riku Goto: Investigation(supporting). Naoka Nagamura: Investigation (supporting).Ovidiu Cretu: Formal analysis (supporting); Investigation (sup-porting). Koji Kimoto: Formal analysis (supporting); Investigation(supporting). Koichiro Yaji: Conceptualization (lead); Fundingacquisition (lead); Resources (lead); Supervision (lead); Validation(lead); Writing – review & editing (lead).FIG. 4. (a) The ARPES intensity of SLG/YIG(111) along ΓK . (b) MDCsobtained from the ARPES intensity shown in (a). The energy range of0.0–2.0 eV with an energy step of 0.1 eV is examined. (c) Peak position plots(circles) obtained from MDCs shown in (b). The square was obtained as a refer-ence from ARPES measurements of SLG/SiC(0001) (Fig. S2 in theSupplementary material).Journal ofApplied PhysicsARTICLE pubs.aip.org/aip/japJ. Appl. Phys. 138, 064301 (2025); doi: 10.1063/5.0283562 138, 064301-5© Author(s) 2025 11 August 2025 22:15:32https://doi.org/10.60893/figshare.jap.c.7937075https://doi.org/10.60893/figshare.jap.c.7937075https://pubs.aip.org/aip/japDATA AVAILABILITYThe data that support the findings of this study are availablefrom the corresponding author upon reasonable request.REFERENCES1C. Gómez-Navarro, M. Burghard, and K. 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