# Fileset

[2025A00686G_ACS materials letters.pdf](https://mdr.nims.go.jp/filesets/d6d2a0db-5f65-4642-8522-33b3b4f56924/download)

## Creator

Shuhong Li, Ryotaro Otake, Tomonori Nishimura, [Takashi Taniguchi](https://orcid.org/0000-0002-1467-3105), [Kenji Watanabe](https://orcid.org/0000-0003-3701-8119), [Yoshiki Sakuma](https://orcid.org/0000-0001-6804-7217), Kosuke Nagashio

## Rights

This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Materials Letters, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsmaterialslett.5c00291.[In Copyright](http://rightsstatements.org/vocab/InC/1.0/)

## Other metadata

[Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er<sub>2</sub>O<sub>3</sub> Dielectrics on Two-Dimensional MoS<sub>2</sub> Field-Effect Transistors](https://mdr.nims.go.jp/datasets/32974794-8f6d-4a4c-a1a1-3006a4f1bd7d)

## Fulltext