# Fileset

[Poster presentation](https://mdr.nims.go.jp/filesets/d1c6c5bb-3e76-470f-9a65-b0022bc097c7/download)

## Creator

[FUJITA, Daisuke](https://orcid.org/0000-0001-7025-0265)

## Rights



## Other metadata

[Development of UHV scanning probe microscope with external stress and strain application](https://mdr.nims.go.jp/datasets/2e1eee3a-384e-4cc4-b0d0-b3f5f19b2eee)

## Fulltext

ｽﾗｲﾄﾞ ﾀｲﾄﾙなしDevelopment of UHV scanning probe microscope with external stress and strain application D Fujita, M. Kitahara, K. Onishi and K. SagisakaAdvanced Nano Characterization Center, National Institute for Materials Science (NIMS)1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JapanSurface stress and strain play important roles in surfacereconstruction and nanostructure growth. If we can controlthe surface stress and strain, it may be one of the keytechnologies for fabrication of novel functionalnanostructures. In order to understand the effect ofstress/strain on the surface nanostructures, we havedeveloped a dual probe UHV-STM with in-situ externalstress/strain application capability.Introduction Summary* E-mail: fujita.daisuke@nims.go.jp www.nims.go.jp/nanophys6/  References[1] F. K. Men, W. E. Packard, and M. B. Webb, Phys. Rev. Lett. 61, 2469 (1988)Si(100) surface was selected as a suitable model system toclarify the performance of our stress-applicable UHV Dual-probe STM. Original vicinal Si(100) surface showed evendistribution of (12) and (21) domains. At elevatedtemperatures, we have succeeded in in-situ observation ofdomain redistribution on Si(100) surface induced by applying auni-axial stress with atomic resolution. Domains for which anapplied tensile stress is directed along the dimer bond becomeless stable and shrink. By this way, quasi single (12) domainsurface can be fabricated.NSP1-1041988 Men, Packard, Webb: Phys. Rev. Lett., 61, 2469Si(100) Surface under an Externally Applied StressLEED in-situ Observation1990 Swartzentruber, Mo, Webb, Lagally: J. Vac. Sci. Technol. A, 8, 210Strain Effects on Si(001) using STMUHV-STM ex-situ observation after Stress Application1998 Coupeau, Girard, Grilhe:J. Vac. Sci. Technol. B, 16, 1964AFM in-situ Observations under Deformation in AirPurposeDevelopment of in-situ Stress-Field STM in UHV with Atomic Resolution ImagingDemonstration of the Performance of the Stress-Filed STM by its Application to Double-domain Si(100) SurfacesHistorical Background SPM Probe#1SampleZLong-Focus MicroscopeSPM stageUHVStepping MotorMicrometerHeadStress ApplicationUHVViewing PortCCD CameraMonitorSPM stageSPM Probe #2Controller Basic DesignMaterial Mechanicst : thickness [m]l : length [m] : deviation at the center [m] : strain : stressE :Young’s modulus [N/m2] 26ltTensile Stress26lEt(12)V = +0.8V, I = 120 pASTM Image taken by Stress-Field STMSi(100)  Model Si : E = 1.8051011 N/m2Long-Focus MicroscopeSPMChamberPreparationChamberLEEDController 2Air DamperController 1Probe 1 Probe 2Stress Application JigTensile Stress125nm/stepSi(100)STM W TipQuartz UHV Stepping Motor Stress-Field SPMTip/Sample StockerStage LockEddy Current DampingSample/Tip Transfer RodP =  10-8 PaUHVStepping MotorSi(111) n-type P-doped 0.01cm 250mt  Bending Stress (  = 125 m,  = 0.155%,  = 280 MPa)  Tensile Stress Filled StateAtomic ResolutionV = -0.75V I =0.08nA10nm10nmV =0.75V I =0.08nAEmpty State0.7deg. Off <110> Si(100) n-type P-doped 0.02cm 250mt  W tip at RTSi(100) Vicinal SurfaceBending Stress at  600 deg C for 5 min. (  = 60 m,  = 0.074%,  = 134 MPa)  Clean Surface before Stress Application After Tensile-Stress ApplicationDomains for which an applied tensile stress is directed along the dimer bond become less stable and shrink. (21) : (12) = 50% : 50% (12)(21)(21) : (12) = 20% :80% (21)(12)(21)(12)Tensile StressStableTensile StressLessstableTensile Stress(12) (21)(12)(21)mailto:fujita.daisuke@nims.go.jp