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Cecilia Y. Chen, Samuel L. Moore, Rishi Maiti, Jared S. Ginsberg, M. Mehdi Jadidi, Baichang Li, Sang Hoon Chae, Anjaly Rajendran, Gauri N. Patwardhan, [Kenji Watanabe](https://orcid.org/0000-0003-3701-8119), [Takashi Taniguchi](https://orcid.org/0000-0002-1467-3105), James Hone, D. N. Basov, Alexander L. Gaeta

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[Unzipping hBN with ultrashort mid-infrared pulses](https://mdr.nims.go.jp/datasets/72ff8f4b-d119-401f-b2da-fb8fd26004d5)

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Unzipping hBN with ultrashort mid-infrared pulsesChen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e1 of 9M AT E R I A L S  S C I E N C EUnzipping hBN with ultrashort mid-infrared pulsesCecilia Y. Chen1, Samuel L. Moore2, Rishi Maiti3,4, Jared S. Ginsberg3, M. Mehdi Jadidi3,  Baichang Li5, Sang Hoon Chae5,6,7, Anjaly Rajendran1, Gauri N. Patwardhan3,8, Kenji Watanabe9, Takashi Taniguchi10, James Hone5, D. N. Basov2, Alexander L. Gaeta1,3*Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon “unzipping” to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displace-ment and high local bond strain produced by strongly driving the crystal at a natural resonance. This process oc-curs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.INTRODUCTIONExisting nanostructuring methods achieve nanometer-resolution fea-tures with cleanroom-assisted processes such as electron beam lithography (1–4) and etching (2–4) or in  situ femtosecond laser writing (5). However, the former are time-intensive, are costly, and require multistep processing, and the latter relies on ablation. Both approaches leave residue or debris. Femtosecond laser writing, aided by multiphoton absorption and the generation of ionized electrons, is a thermal process that deposits heat locally in the region being excited and thus is not able to produce structures much smaller than the excitation wavelength (6). At sufficiently high excitation energy, the material will undergo structural changes such as burning or ab-lation patterns consistent with heat deposition (6). Our unzipping technique generates structures on the nanoscale, orders of magni-tude below the mid-infrared (IR) diffraction limit, without ablation. Features are written in situ directly (resist-free) on hexagonal boron nitride (hBN) without vacuum or cryogenics in seconds, and the flake remains clean.The in-plane hexagonal crystal structure of many two-dimensional (2D) van der Waals (vdW) materials yields two high-symmetry axes separated by 30°, known as zigzag and armchair. In hBN, the TO(E1u) phonon at 7.3 μm corresponds to in-plane atomic motion parallel to the zigzag axis (Fig. 1B, inset) where boron and nitrogen displace in opposite directions. This optical phonon is dipole active and lies in the laser-accessible mid-IR regime due to the material’s light constituent atoms. Coherent resonant excitation of the phonon at pulse intensities of 10 TW/cm2, within the linear phonon-driving regime and far below the estimated laser-induced damage threshold of 50 TW/cm2 (7, 8), was calculated to yield transient strains corre-sponding to atomic displacements of 10% of the equilibrium lattice constant (7). Furthermore, nonlinear phononics has been demon-strated to dynamically modify the symmetry of materials (9–13), resulting in structural phase transitions and ferroic behavior. Prefer-ential orientation of flake fracture and crack formation and propa-gation has been studied previously in hexagonal vdW materials subject to exfoliation forces (14). Predictably, the histograms cluster around the armchair and zigzag axes, with an angular spread about each orientation. Graphene and hBN have roughly equal preference for armchair and zigzag, while 2H-MoS2 and analogous transition-metal dichalcogenides display strong directional preference (14, 15).In this study, we take an approach to deterministically inducing flake fracture by exploiting the natural vibration of atoms and driv-ing them coherently with mid-IR pulses. Here, pulse intensities of 50 to 65 TW/cm2 generate larger atomic displacements than previ-ously studied and lead to macroscopic material structuring in the form of controllable, localized, rapid crack propagation. These dis-placements amplify lattice-scale strain and prompt organized frac-ture along an imposed symmetry. This approach allows us to introduce atomic-scale line defects to ultrahigh-purity exfoliated hBN flakes by directly accessing the TO(E1u) mode from free space, which we demonstrate in samples with height of 24 to 76 nm. The features are seeded from a random point within the laser-driven spot, possibly originating from an intrinsic defect, and unzip from the tip with largely unidirectional growth. The speed of formation is estimated to be on the order of 100 μm/s. This work represents the demonstra-tion of optically generated single-line defects using a wavelength far below the material bandgap, and this unzipping phenomenon oc-curs only through coherent driving of hBN.RESULTSCharacteristics of unzippingThe experimental setup in which we gate the high-intensity pulses using a manual shutter until the damage threshold is reached is il-lustrated in fig. S1. In Fig. 1C, a tunable femtosecond source irradiated 1Department of Electrical Engineering, Columbia University, New York, NY 10027, USA. 2Department of Physics, Columbia University, New York, NY 10027, USA. 3De-partment of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA. 4Department of Physics, Indian Institute of Technology Guwa-hati, Assam 781039, India. 5Department of Mechanical Engineering, Columbia Uni-versity, New York, NY 10027, USA. 6School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore. 7School of Mate-rials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore. 8School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA. 9Research Center for Functional Materials, National Institute for Ma-terials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. 10International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.*Corresponding author. Email: a.​gaeta@​columbia.​eduCopyright © 2024 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). Downloaded from https://www.science.org on May 03, 2024mailto:a.​gaeta@​columbia.​eduhttp://crossmark.crossref.org/dialog/?doi=10.1126%2Fsciadv.adi3653&domain=pdf&date_stamp=2024-05-01Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e2 of 9a single flake at neighboring spots, both on (λ = 7.3 μm) and away from (λ = 4.5 μm) the hBN optical phonon resonance. The source polarization was identical in both cases, and irradiation continued until the first indication of structural change to the flake. We ob-serve several critical differences in the sample at the two excitation wavelengths. A line defect appears at the on-resonant spot, while the off-resonant spot is burned and ablated. The minimum achievable zip width is measured to be <30 nm despite being generated with a λ  =  7.3 μm beam, making the features highly sub-wavelength in scale. With off-resonant irradiation, the size of the ablated spot is on the order of the irradiation wavelength, as expected for convention-al laser damage via localized thermal heating. Line defects do not appear at the off-resonance damage threshold even with the same polarization and flake orientation, further confirming that unzip-ping is associated with on-resonance driving. The absence of abla-tion, seen more clearly among several repeated zips on a single flake in Fig. 1D, distinguishes unzipping as a method of gentle and wavelength-selective defect creation.Because unzipping is the product of selective phonon driving, it inherits symmetries from the crystal. As expected for a system with rotational symmetry, the ease of unzipping hBN depends on the rela-tive angle between the laser polarization and the crystal axes. Un-zipped lines form roughly perpendicular to the polarization, with a deviation of ±15°. For a given flake orientation, not every polariza-tion can produce a line defect. Sweeping all relative angles between the sample orientation and pump polarization, as shown in fig. S2, revealed the expected sixfold symmetry. The distribution of these polarizations is periodic: the sector width of polarizations that unzip hBN is ≤50° and repeats every 60°. Polarizations falling outside of these ranges will produce a dense crosshatch pattern (fig. S2D). Nev-ertheless, in contrast to the off-resonant example, the structural changes retain a straight-edged, ordered geometry. Furthermore, the optimal polarization within each sector yielding the highest-quality unzipped lines that are atomically sharp, clean, and straight is paral-lel to the zigzag axis or perpendicular to the resulting zip. (This property can also be used to determine an unknown flake orienta-tion.) The farther the polarization strays from optimum, the more resistant the flake is to unzipping. The sample would require pro-longed laser exposure and exhibit slower crack propagation with increased likelihood that the lines will be wider, kinked (examples in Figs. 2D, 3D, and 4A), feathered (example in Fig. 2D), or produce light debris (examples in Fig. 1C and fig. S2A). If the laser polariza-tion is not optimized relative to the crystal orientation, then the lines formed will not be perfectly straight, instead exhibiting these kinks as a result of branching between several parallel armchair axes to satisfy the local energy conditions. These zips also appear wider.Regardless of zip quality, all line defects created via phonon-resonant excitation are sharply tapered at the ends, which supports the picture of unzipping as originating from bond rupture. Driving the TO(E1u) phonon stretches bonds parallel to the zigzag axis, which we expect leads to fracture primarily in the direction perpen-dicular to the applied strain or along the armchair axis. To test this hypothesis, we performed atomic-scale lateral force microscopy (LFM) (16, 17) on our exfoliated flakes to determine the crystal Fig. 1. A phonon-resonant effect. “Unzipping” occurs only when hBN is strongly driven at its TO phonon resonance and yields ablation-free line defects. (A) Top: In this experiment, a pulsed mid-IR laser is focused onto an hBN flake, producing a localized edge or “zip.” Bottom: The zip is oriented along the armchair axis. (B) Fourier trans-form infrared (FTIR) spectroscopy linear reflectance spectrum about the hBN TO(E1u) phonon resonance on pristine hBN relative to the SiO2/Si substrate, centered at 1367 cm−1 (λ = 7.3 μm). Inset: AA′-stacked hBN illustrating the mode of interest. We directly drive this mode with a laser tuned to 7.3 μm to subject the crystal to high in-plane lattice-scale strain. (C) Comparison of off- and on-resonant ultrafast irradiation of a 70-nm flake at λ = 4.5 and 7.3 μm, respectively. The latter results in a highly sub-wavelength line defect (zip); burning is absent, and the line is oriented roughly perpendicular to the laser polarization. Off-resonant irradiation at 4.5 μm generates a wavelength-scale burned spot and lacks polarization dependence. (D) A series of clean, parallel zips produced by a perpendicularly polarized laser on a single flake with height of 38 nm. The width here measures <30 nm (fig. S6).Downloaded from https://www.science.org on May 03, 2024Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e3 of 9Fig. 2. Polarization dependence. Unzipping is sensitive to the pump laser polarization. (A to C) Atomic-scale lateral force microscopy (LFM) determines the crystal orien-tation of an hBN flake and hence the unzipping direction. The scan region is marked in (C). (A) LFM friction channel image after filtering, with zigzag and armchair direc-tions marked. Inset: 2D fast Fourier transform (FFT) of unfiltered friction channel. (B) Linecuts along the zigzag and armchair directions yield periodicities of 29 and 50 Å, respectively, confirming the measurement. The y axes are offset for clarity. a.u., arbitrary units. (C) The 70-nm-thick flake imaged with LFM. The zips measure 66° from the armchair-oriented flake edges, making them nearly parallel to an armchair axis of the crystal. (D and E) The unzipping phenomenon occurs independently of the choice of substrate. (D) Unzipped lines on a 60-nm-thick hBN flake on SiO2/Si. The sensitivity of unzipping to pump laser polarization is evident in the transition from an X-shaped line defect to a parallel single line under a 10° shift in polarization. (E) Unzipped lines on an 84-nm-thick hBN sample on sapphire. Zips generated by the same polarization are parallel.0 nm100 nm5 μm0 nm1652 μm1.9 μmAB C DE5 μm2 μmHeight profile of cleaved flaker (μm)z (nm)0200 1 2 3Height (nm)Period (μm)Quasi-grating period vs. flake height12310 20 30 40 50 60 70 80 90Fig. 3. Applications in flake patterning and nanostructuring. All-optical in situ patterning of hBN flakes using the mid-IR phonon-resonant technique. (A and B) Unzip-ping can be controllably and boundlessly extended once initiated, achieving an ultrahigh aspect ratio. (A) AFM topography: A 24-nm-thick flake is cleaved in two by ex-tending an initial unzipped line in both directions. A slight edge offset at the left and right ends of the cleavage line reveal that the bottom section has rotated and shifted along the substrate. Inset: Height profile along the dashed linecut confirms full separation of the cleaved sections. (B) Micrograph: The initial unzipped line is local-ized within the slight discolored spot. (C and D) Quasi-periodic gratings generated by the unzipping technique on a 50-nm-thick flake, represented in a micrograph (C) and topographic AFM image (D). (E) Linear trend between grating period and flake height. Error bars indicate the range of periodicities displayed by the quasi-periodic gratings.Downloaded from https://www.science.org on May 03, 2024Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e4 of 9orientation, because the standard second-harmonic generation (SHG) method is unsuitable in hBN beyond the few-layer limit (18–20). Figure 2A displays the filtered friction channel image with its raw 2D fast Fourier transform (FFT). Figure 2B shows the friction channel linecuts along the zigzag (zz) and armchair (ac) directions. Periodicities were measured to be Tzz = 2.9 Å and Tac = 5.0 Å, re-spectively. The ratio Tac/Tzz is equal to √3 as expected for a hexago-nal lattice, despite a proportional deviation from the accepted hBN lattice periodicities of 2.5 and 4.3 Å (21). From the LFM measure-ments, we conclude that the flake in Fig. 2C unzips approximately along the armchair direction (66° from the armchair flake edge) even when created under suboptimal conditions. While the over-all unzipping angle may be slightly off from 60°, the constituent segments of the kinked zip strongly prefer to fall along the arm-chair axis.In addition to single unzipped lines, there are variations on un-zipping that can appear under comparable irradiation conditions. As seen in Figs. 1D and 2C, two independent yet parallel lines may form simultaneously. Figure 2D displays an example of the rarer X-shaped unzipping due to its high sensitivity to relative polarization. Two kinked, near-armchair zips separated by ~50° result from sym-metric activation. While the individual zips are no longer perpen-dicular to the driving polarization (as in the standard case), their angle bisector is, and shifting the polarization by just 10° recovers a single zip parallel to one of them. Atomic-scale line defects have also been generated in monolayer graphene using electron beam irradia-tion (15), but, unlike the unzipping phenomenon, they exhibit a slower crack propagation speed of 1 μm/s and lack polarization de-pendence or X-shaped features. This contrast reaffirms the role of laser-phonon driving in our experiment.An added feature of the unzipping technique is that it is consis-tent and robust. For a given flake at fixed orientation driven by the same allowed pump polarization, all zips formed will be parallel. This is illustrated in Figs. 1D and 2E. Furthermore, these line fea-tures can be generated in flakes of various thickness spanning tens of nanometers, even with a moderately misaligned laser, slightly ir-regular beam shape, variation in average pump intensity and pulse-gating pattern, and/or suboptimal pump polarization. We also refer to fig. S2, which illustrates three categories of unzipping: “proper,” suboptimal, and failed zips. Proper unzipping is characterized by clean lines and an absence of ablation damage, produced when the laser polarization is perpendicular to the armchair crystal orienta-tion. Figure 2C shows an example of a flake that unzipped along the armchair axis despite poorer beam shape and alignment, which re-sulted in a zip that was not as sharp, clean, and straight. [The irregu-lar streaking within these irradiated spots is not unzipping, and the flake appears smooth under atomic force microscopy (AFM). See fig. S3B.]Last, the unzipping effect itself occurs independently of the substrate. Features were produced primarily on flakes on SiO2/Si, but unzipped lines also form on hBN on sapphire (Fig. 2E). [We note that the slight discolored spots are a substrate effect in sili-con (22) and are not seen on samples exfoliated onto sapphire (Fig.  2E). Discoloration is present on the irradiated bare sub-strate in fig. S4 regardless of mid-IR wavelength.] However, un-zipping flakes of similar thickness on sapphire is more difficult due to poorer flake adhesion, resulting in greater sensitivity to the irradiation parameters. These flakes tend to unzip and im-mediately rip or peel from the substrate. To combat the less ro-bust nature of unzipping on sapphire, we reduced the average pump intensity by a factor of 3 and operated within a narrower viable fluence window.Applications of unzippingOne application of unzipping is an all-optical, orientation-selective, in situ method for cleaving or patterning flakes. In Fig. 3 (A and B), unzipping cuts completely through thinner <30-nm-thick flakes. Once an unzipped region is created (localized within the faint cir-cle), it can be easily and boundlessly elongated by shifting the pump beam incrementally along the unzipping axis with a piezoelectric stage. Even without a stage, the line can be extended cleanly by ir-radiating slightly beyond its existing endpoints. This technique may be used to cleave a single hBN flake for self-oriented stacking in a moiré homostructure (23). Similarly, adjacent regions can be irradi-ated with different polarizations, and the resulting zips will snap together at 60° angles (fig. S5), opening the door to custom flake SNOM phase: Edge couplingSNOM phase: Defect couplingLine defect topographyMin MaxB CDA1 μm 1 μm 1 μmSNOM phaseMin MaxLineout (nm)Rad.0.10.20.30.40.50.60.70 800600400200Fig. 4. Atomically sharp edges. Unzipped lines are atomically sharp and exhibit highly efficient coupling to phonon-polaritons. This flake is 38 nm in height. (A) AFM topography of a kinked (suboptimal) zip. (B and C) Near-field phase images under 1494.5 cm−1 excitation, as probed by scattering-type scanning near-field optical micros-copy (s-SNOM). (B) Phonon-polariton coupling via an unzipped line. (C) Coupling via a natural flake edge formed by mechanical exfoliation. (D) Unzipped lines are atomically sharp and can outperform flake edges in coupling to phonon-polaritons, as evidenced by a comparison of modulation depth and decay rate along the dashed linecuts in (B) and (C).Downloaded from https://www.science.org on May 03, 2024Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e5 of 9shapes and linear feature designs. These examples illustrate hBN’s potential as a patterned, orientation-selective layer, either by itself, as a mask (2), or in a 2D heterostructure (24), especially because it is mechanically tough (25), has a large bandgap (26), and is widely used as an encapsulating material (27).The unzipping mechanism can also generate quasi-periodic gratings (Fig. 3, C to E) at slightly higher irradiation fluences. These gratings emanate from an initial unzipped line, mainly in one di-rection, at a speed of 10 μm/s. In some cases, they can be intro-duced separately by irradiating an existing unzipped region. We hypothesize that these gratings form when intense phonon-polaritons (28) are launched from the initial unzipped region, leading to a “rippling” through the crystal (the resulting surface is not raised). However, an investigation into the exact mechanism is beyond the scope of this work. The grating period follows a linear trend with flake height (Fig. 3E), where we define the grating period as twice the line spacing to correlate the periodicity with the phonon-polariton wavelength. Notably, unzipping and their quasi-periodic gratings are fundamentally distinct from nanogratings (29) and laser-induced periodic surface structures (30, 31). The nanostruc-tures described here display atomically sharp, tapered lines with a low-duty cycle, are associated with a resonant phonon effect in-stead of plasma formation, and are oriented along the armchair crystal axes. Quasi-periodic gratings may find applications in en-hancing wave coupling from free space or as a standalone nanopat-terning technique.Figure 4 demonstrates efficient coupling from free-space opti-cal excitation to polaritons in hBN via unzipped nanostructures. Figure 4D compares linecuts of scattering-type scanning near-field optical microscopy (s-SNOM) phase images from excitation with-in the hBN upper Reststrahlen band: Phonon-polaritons launched by the unzipped line exhibit much greater modulation depth and slower decay than those by a natural edge on the same flake. We conclude that unzipped “artificial edges” can outperform exfoliated edges in coupling to polaritons and give the user freedom of edge placement. Compared to conventional coupling methods (32), un-zipping yields a directional phase front, as opposed to launching from an AFM tip (28, 33), and is a quick, cleanroom-free tech-nique, unlike electron beam patterning (32) or gold nanostructures (32, 34).We also show that the location of unzipped lines can be deter-ministically controlled by defect seeding via nanoindentation (Fig. 5A). A distinct pattern of nanoindents, seen in Fig. 5A inset, was written on the flake to aid in identifying the area of interest. We then irradi-ate the flake with phonon-resonant pulses at half the power used in the standard unzipping procedure until a zip sprouts from one of the nanoindents. Most notably, the non-nanoindented areas of the flake were insensitive to the reduced laser power at resonance even after 10 s of total exposure time, whereas the nanoindented regions unzipped after a fraction of a second. No line was generated on the pristine sample at equal power because its threshold for unzipping is much higher. Consequently, nanoindentation provides a way to spa-tially localize unzipping on demand.A demonstration of unzipping’s capacity to yield potentially useful devices is the realization of a Fabry-Perot polariton cavity. We show that small cavities <1 μm in width can be created with the mid-IR laser source, and Fig.  5B shows the AFM topography of such a structure, where a 630-nm-wide slab of hBN is cut from the surrounding flake by the unzipping technique. Figure 5C displays an s-SNOM scattering amplitude image of the unzipped cavity tak-en at ω = 1453 cm−1, following calculated dispersion relations for hyperbolic phonon-polaritons (HPhPs) in hBN by Dai et al. (28). The high field amplitude seen in the center of the cavity agrees with the more exhaustive broadband nano–Fourier transform infrared (FTIR) line scans across the cavity that reveal a resonance peak around 1457 cm−1 (Fig. 5, D and E). After a linear background is A1 μmBCD�������������������Cavity resonanceWave number (cm−1)|S| (a.u.)1420 1440 1460 1480 15000.81.01.21.41.6E Broadband nano-FTIR line scanWave number (cm−1)x (μm)1300135014001450150015501 2.521.5|S| (a.u.)0.81.01.21.41.61.8AFM topography1 μmy (μm)0 6420205z (nm)x (μm)s-SNOM amplitude, ω = 1453 cm−1y (μm)020 6421 μm0.40.3|S| (a.u.)Fig. 5. Polariton cavity and defect seeding. (A) AFM topography of a 50-nm-thick flake subject to nanoindentation patterning. The flake was then irradiated on reso-nance until an unzipped line sprouted from a defect-seeded location. Inset: A unique nanoindented pattern on the flake, before irradiation at λ = 7.3 μm, written for local-ized identification. (B to E) A Fabry-Perot polariton cavity in hBN fabricated by the unzipping technique, imaged by near-field techniques. This flake is 40 nm in height and features a 630-nm-wide cavity. (B) AFM topography of the unzipped hBN cavity. (C) s-SNOM amplitude image of the cavity probed near resonance at 1453 cm−1 shows field confinement. The cavity boundaries are marked by dotted white lines. (D) Cavity resonance lineshape with an estimated Q ≈ 70 extracted from a Lorentzian fit to the data points. Its corresponding linecut in the hyperspectral image (E) is marked by the dashed white line. (E) A hyperspectral line scan across the cavity obtained via nano-FTIR. The cavity boundaries are marked by dotted white lines.Downloaded from https://www.science.org on May 03, 2024Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e6 of 9subtracted from the data and the peak is fitted to a Lorentzian line-shape, we extract a quality factor Q = ω0/Δω = 1457 cm−1/20.6 cm−1 ≈ 70, with an SD of 2.3 cm−1 in the full width at half maximum (FWHM) fit.Our unzipped cavity achieves comparable performance to simi-lar all-hBN planar resonators fabricated by well-established meth-ods. Structures created via electron beam lithography and etching (35, 36) have demonstrated Q factors between 50 and 100. We be-lieve the atomically sharp edges characteristic of unzipping provide an advantage over etched edges. In addition, these cleanroom-fabricated structures have a more optimal resonator geometry, hBN slabs bounded by air, while our cavities are bordered by narrow trenches several tens of nanometers across. Improvements in the ge-ometry of our preliminary unzipped cavity device could yield stronger field enhancement for applications in light-matter interaction.DISCUSSIONWe have characterized the unzipping phenomenon as fundamen-tally dependent on the wavelength of the driving laser and its polar-ization relative to the crystal axes, and the results of the nanoindentation experiment confirm that it can be seeded by macroscopic defects placed wherever desired by the user. To explore the underlying prin-ciples of the effect, we performed the unzipping procedure on a flake exfoliated from a commercially available hBN crystal. Compared to the ultrahigh-quality flakes studied in the rest of this work, the low-er quality commercial samples on the same substrate unzipped with lower irradiation power and substantially reduced laser exposure time. Furthermore, we could easily and cleanly unzip thicker ~100-nm flakes by slightly increasing the laser power, whereas we were not able to do this on the ultrahigh-quality sample. These observa-tions strongly suggest that unzipping is also seeded by defects at the atomic level.Existing literature on bulk and 2D material fracture mechanisms offer some possible clues to explain the unzipping phenomenon. In the case of nanoindentation, macroscopic defects function as “pre-cracks” that prime crack growth and propagation following the clas-sical Griffith theory of brittle fracture (37, 38). They are known to dominate nanoscale defects in determining crack behavior. Crack propagation and the effect of microscopic defects in 2D materials on the atomic scale are less well understood. One study showed that the placement of atomic dislocations near the crack tip zone in MoS2 influenced the path of the propagating crack by modifying the strain field directly in front of the tip (39). As the crack advanced with each snapshot in time, the dislocation would appear again at a different location in front of the tip, influencing the next advancement and so on. This “dislocation emission” theory at the nanoscale goes beyond traditional brittle fracture theory. We hypothesize that coherent resonant driving at the phonon resonance breaks atomic bonds, preferentially near intrinsic defects in the crystal, seeding and grow-ing nanoscale defects until they are large enough to qualify as mac-roscopic pre-cracks governed by classical fracture mechanisms. Past this threshold, catastrophic rupture characteristic of the Griffith mod-el overtakes and leads to the observable unzipping motion. Accord-ing to time-dependent density functional theory simulations, irradiating hBN at the TO(E1u) phonon frequency at substantially lower optical powers than are used for the unzipping technique already produces atomic displacements nearing 10% of the lattice constant (7). At fivefold greater pulse intensities of >50 TW/cm2 here, nonlinear effects arise and higher bond strain is induced. We hope future the-ory calculations will illuminate the complex mesoscopic dynamics underlying the mechanical fracturing generated by optical ex-citation.In summary, strong resonant driving of hBN at its 7.3 μm TO(E1u) phonon resonance allows us to unzip the flake or place atomically sharp edges within the flake interior, along the armchair crystal direction. In contrast to the flake burning typical of strong off-resonant irradiation, this gentle and debris-free technique of se-lectively driving a vibrational mode generates localized, directional bond strain within the material. The result demonstrates optically induced strain strong enough to cause flake fracture. This unzipped region can be extended infinitely along the flake for in situ orientation-selective cleaving. We also show that, while unzipping is driven by a mid-IR laser with a correspondingly large beam size, it directly fab-ricates lines and structures on the nanoscale. The sharp edges generated by unzipping hBN exhibit highly efficient coupling to phonon-polaritons and can confine mid-IR HPhPs to sub-micrometer length scales in a Fabry-Perot cavity with Q ≈ 70. Our technique may be generalized to other polar crystals with IR-active optical phonons, such as SiC or α-MoO3, which have phonon modes around 10 μm (40–42). The unzipping phenomenon is fundamentally elegant yet also offers practical purpose in localizing and enhancing mid-IR emission, mask patterning, custom flake shaping, and molecular sensing (36).MATERIALS AND METHODSSample preparationUltrahigh-quality AA′-stacked hBN (intrinsic defect density 109 cm−2) is mechanically exfoliated using low-residue Scotch Magic Greener tape onto 285-nm SiO2-on-Si and sapphire substrates that were first subject to an O2 plasma treatment to remove adsorbates. No anneal-ing was performed after exfoliation.A commercially available hBN crystal from HQ Graphene was exfoliated onto a SiO2-on-Si substrate for a comparison of unzip-ping performance.Phonon-resonant irradiation of hBNThe hBN flakes are irradiated with a 1-kHz pulsed mid-IR laser tuned to the hBN TO(E1u) phonon at 1367 cm−1 (λ = 7.3 μm). We achieve this output with a laser system consisting of a Ti:sapphire mode-locked oscillator (KMLabs Griffin), Ti:sapphire chirped pulse amplifier with regenerative amplification outputting 6-mJ pulse en-ergy at 1-kHz repetition rate (Coherent Legend Elite), optical para-metric amplifier (Light Conversion HE-TOPAS Prime), and a subsequent difference-frequency generation module (Light Conver-sion NDFG). The resulting mid-IR pulses measure 120 fs in pulse width and 1.5-μm FWHM.The beam is routed to the sample in reflection geometry at nor-mal incidence with a mid-IR dichroic mirror (ISP Optics BSP- DI-25-3) and focused with a 40× reflective objective (Thorlabs LMM-40X-P01, 0.5 numerical aperture). The incident average pow-er is 250 μW. Pulse selection is performed manually with an elec-tronic shutter (Melles Griot) as we monitor the formation of unzipped lines on a charge-coupled device camera mounted in the reflection path. The shutter speed is tunable from 1/60 to 2 s, although success-ful unzipping is achieved with the shutter operating at 1/4 second or less. The total laser fluence required to achieve an initial unzipped Downloaded from https://www.science.org on May 03, 2024Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e7 of 9line defect is on the order of 103 J/cm2 (variable, depending on relative polarization and local flake thickness and uniformity), adjusted with a combination of ZnSe reflective neutral density (ND) filters (Thorlabs), mid-IR polarization optics, pulse gating settings (shutter speed and repetitions), and an optional band-pass filter at 7500 ± 50 nm (Thorlabs). hBN on SiO2/Si unzipped with an average pulse intensity of 50 TW/cm2; flakes on sapphire required lower peak power due to weak substrate adhesion. All defect creation was per-formed under ambient conditions.The angle between the laser polarization and crystal orientation was controlled by either rotating the sample relative to a fixed linear polarization or adjusting the pump polarization using mid-IR polar-ization optics (Alphalas tunable zero-order waveplates, Thorlabs ZnSe wire grid polarizers), which yielded equivalent results. Ex-tending the unzipped line requires substantial pump power reduc-tion that we achieve with the 7.5-μm band-pass filter (Thorlabs). It cuts the total power by 85% while still maintaining a spectrum that overlaps the transverse optical (TO) phonon resonance in Fig. 1B. This can also be substituted for additional ND filters. The most uniform line defect extension is achieved by incrementally translating the sample on a piezoelectric stage. Another technique is to irradiate an adjoining spot; the independently generated unzipped lines will merge.Off-resonant irradiation of hBNTo confirm that unzipping is a resonant effect, we repeat the defect generation process at an off-resonant mid-IR wavelength. The ex-perimental setup is identical, with the output of the NDFG module now tuned to λ = 4.5 μm (τp = 100 fs, 1-μm FWHM). The fluence required to straddle the damage threshold here is very similar to that of the resonant case (at minimum, the same order of magnitude).AFM topographic imagingAFM topography was imaged on a Bruker Dimension Icon in auto-mated tapping (ScanAsyst) mode with ScanAsyst-Air probes at 0.5-Hz scan rate and 128-pixel resolution. Plane leveling and post-processing were done in Gwyddion (43).Atomic-scale imaging of hBN crystal orientationWe determine the crystal orientation of hBN flakes using atomic-scale LFM. Friction channel scans were taken on a Bruker Dimen-sion Icon with a silicon nitride tip on a silicon nitride cantilever (Bruker DNP-C, nominal k =  0.24 N/m) at 2.5-Hz scan rate in constant height mode. Residual noise from the XY sensors can affect scans at the angstrom level, so the XY closed-loop control parameter should be turned off. A fresh antistatic ionizing car-tridge containing alpha particle-emitting polonium-210 (Static-Master CPSMR3) was placed near the sample to neutralize electrostatic effects impeding tip engagement and imaging. We then performed plane leveling and 2D FFT filtering on the raw images in Gwyddion.NanoindentationNanoindents were created on hBN flakes to controllably localize and seed zip creation. The procedure, similar to that of an experi-ment where nanoindentation was used to write quantum emitters in hBN (44), was performed on a Bruker Dimension Icon in the PeakForce quantitative nanomechanical mapping workspace in contact mode. We chose BudgetSensors Tap300DLC (mea-sured k  =  101 N/m; 15-nm tip radius), a silicon AFM tip with a diamond-like carbon coating, for durability on a hard material like hBN. Nanoindentation patterns were generated using Point and Shoot under the Ramp menu. The deflection trigger threshold, or maximum force applied to the sample, was set to a value between 21 and 28 μN where the force curve first exhibited signs of plastic deformation. The X Rotate parameter was assigned as 20° to mini-mize lateral plowing of the surface by the tip, which is prone to pitching forward during the indentation phase. A topographical scan of the nanoindented sample was then imaged using the same tip.Scattering-type scanning near-field optical microscopyNear-field images were obtained on a Neaspec GmbH neaSCOPE system equipped with a PtIr-coated AFM tip (ARROW-EFM, 20-nm tip radius) operating at 285-kHz tapping frequency. We use a broad-ly tunable light source (Daylight Solutions MIRcat quantum cas-cade laser) chosen to coincide in frequency with the hBN upper Reststrahlen band (1368 to 1610 cm−1) (28); the signal scattered off the probe tip is sent to a mercury-cadmium-telluride detector. We interferometrically detect and demodulate the signal at harmonics of the tapping frequency via the interferometric pseudo-heterodyne technique (45) to obtain background-free near-field signals with amplitude and phase information. The resulting images demon-strating phonon-polariton propagation in the vicinity of the hBN zip and a natural edge were then processed in Gwyddion. Topography information was obtained concurrently.Nano-FTIR spectroscopyThe cavity behavior in the near-field is probed by broadband nano-FTIR. The mid-IR light source was provided by broadband differ-ence frequency generation from Light Conversion Orpheus Twins seeded by Light Conversion Pharos at 750-kHz repetition rate. The spectrum is detected via FTIR technique, and the signal is demodu-lated at harmonics of the tip tapping frequency. Multiple (~50 to 100) hyperspectral line scans across the cavity are averaged together.FTIR spectroscopy spectraThe far-field FTIR reflectance spectrum of pristine hBN was record-ed with a Bruker Vertex 80v FTIR spectrometer coupled to a Bruker Hyperion II microscope. The aperture of the mid-IR illumination lamp was set to 25 μm. Spectra were acquired with 1000 averages and resolution of 2 cm−1. The SiO2/Si substrate was used as a reference.Scanning electron microscopyScanning electron microscopy (SEM) imaging was carried out using a Zeiss Sigma VP SEM. To avoid an electron charging effect, the ac-celerating voltage was set to 1 kV.Supplementary MaterialsThis PDF file includes:Supplementary TextFigs. S1 to S6REFERENCES AND NOTES  1.  G. Jumbert, M. Placidi, F. Alzina, C. M. Sotomayor Torres, M. 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Thornton from Bruker Corporation for knowledge and support on the atomic-scale LFM and nanoindentation techniques. The work was carried out, in part, in the Shared Materials Characterization Laboratory of the Columbia Nano Initiative (CNI) Shared Lab Facilities at Columbia University. Funding: Research on the nanostructuring of hBN was supported as part of Programmable Quantum Materials, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under award DE-SC0019443. The development of instrumentation for ultrafast mid-IR uses was supported by the National Science Foundation (NSF) PHY-2110615. C.Y.C. acknowledges support from the NSF Graduate Research Fellowship Program DGE 16-44869. K.W. and T.T. acknowledge support from the Japan Society for the Promotion of Science (JSPS) KAKENHI (grant numbers 19H05790, 20H00354, and 21H05233). Author contributions: Conceptualization: C.Y.C., M.M.J., J.S.G., R.M., S.H.C., S.L.M., G.N.P., D.N.B., and A.L.G. Investigation: C.Y.C., S.L.M., R.M., J.S.G., M.M.J., and B.L. Methodology: C.Y.C., J.S.G., M.M.J., R.M., S.L.M., B.L., S.H.C., and A.R. Resources: S.H.C., A.R., J.H., M.M.J., K.W., T.T., S.L.M., G.N.P., D.N.B., and Downloaded from https://www.science.org on May 03, 2024Chen et al., Sci. Adv. 10, eadi3653 (2024)     1 May 2024S c i e n c e  A d v a n c e s  |  R e s e arc   h  A r t i c l e9 of 9A.L.G. Data curation: C.Y.C., S.L.M., J.S.G., R.M., M.M.J., G.N.P., D.N.B., and A.L.G. Formal analysis: C.Y.C., S.L.M., R.M., J.S.G., M.M.J., B.L. Validation: C.Y.C., S.L.M., J.S.G., R.M., M.M.J., and B.L. Software: S.L.M., C.Y.C., J.S.G., G.N.P., and M.M.J. Project administration: C.Y.C., R.M., M.M.J., D.N.B., and A.L.G. Visualization: C.Y.C., M.M.J., J.S.G., and R.M. Funding acquisition: A.L.G., D.N.B., J.H., and M.M.J. Supervision: A.L.G., D.N.B., J.H., M.M.J., S.H.C., and R.M. Writing—original draft: C.Y.C., A.L.G., M.M.J., J.S.G., R.M., S.L.M., and D.N.B. Writing—review and editing: C.Y.C., A.L.G., J.S.G., R.M., S.L.M., D.N.B., M.M.J., S.H.C., B.L., K.W., and T.T. Competing interests: The authors declare that they have no competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials.Submitted 17 June 2023 Accepted 27 March 2024 Published 1 May 2024 10.1126/sciadv.adi3653Downloaded from https://www.science.org on May 03, 2024 Unzipping hBN with ultrashort mid-infrared pulses INTRODUCTION RESULTS Characteristics of unzipping Applications of unzipping DISCUSSION MATERIALS AND METHODS Sample preparation Phonon-resonant irradiation of hBN Off-resonant irradiation of hBN AFM topographic imaging Atomic-scale imaging of hBN crystal orientation Nanoindentation Scattering-type scanning near-field optical microscopy Nano-FTIR spectroscopy FTIR spectroscopy spectra Scanning electron microscopy Supplementary Materials This PDF file includes: REFERENCES AND NOTES Acknowledgments