# Fileset

[SupplemetaryMaterial.pdf](https://mdr.nims.go.jp/filesets/ce7e1fa1-8d70-4425-82e8-ade35288f541/download)

## Creator

[Zhao Ma](https://orcid.org/0000-0003-0151-8592), [Takaaki Mano](https://orcid.org/0000-0002-6955-260X), [Akihiro Ohtake](https://orcid.org/0000-0002-3519-4613), [Takashi Kuroda](https://orcid.org/0000-0001-6445-7673)

## Rights

[Creative Commons BY Attribution 4.0 International](https://creativecommons.org/licenses/by/4.0/)

## Other metadata

[Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation](https://mdr.nims.go.jp/datasets/82d1dfa7-36da-42e3-8e4d-0767e63600ea)

## Fulltext

Effects of arsenic oxides on GaAs surfaces on photoluminescence propertiesof buried InGaAs quantum wells: Dependence on initial surfaces beforeoxidationZhao Ma,1, 2 Takaaki Mano,1 Akihiro Ohtake,1 and Takashi Kuroda1, 21)National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan2)Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Fukuoka 819-0395,Japan(Dated: 4 June 2025)This is a supplementary material of the above-named article, which will be published in Journalof Applied Physics. It contains an additional figure of the low-temperature PL spectrum witha logarithmic intensity scale, where each emission peak was identified.10-510-410-310-210-1100101102103104Intensity (arb.units)900850800Wavelength (nm)Bound-excitonCarbon- relatedPhonon-assistedInGaAs QW As-rich       c(4x4)α surface 4 KSupplementary Figure 1. Low-temperature PL spectraof As-rich c(4×4)α sample for a spectral region from 800 to900 nm. We attribute peaks at 820 and 830 nm to the bound-exciton and carbon related lines of GaAs, respectively, and asmall peak at 850 nm to the phonon-assisted line. The peakat 865 nm is thus attributed to the InGaAs QW.