# Fileset

[Abstract Oxygen-termination effect R.doc](https://mdr.nims.go.jp/filesets/c87d2c3f-5290-4c87-b586-92faf294aa79/download)

## Creator

Keyun Gu, [Zilong Zhang](https://orcid.org/0000-0002-9759-9253), Wen Zhao, Guo Chen, Jian Huang, [Satoshi Koizumi](https://orcid.org/0000-0003-4961-5658), [Yasuo Koide](https://orcid.org/0000-0001-8321-9822), [Meiyong Liao](https://orcid.org/0000-0003-1361-4266)

## Rights

[In Copyright](http://rightsstatements.org/vocab/InC/1.0/)

## Other metadata

[Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMS](https://mdr.nims.go.jp/datasets/0fda7930-67ea-40d3-ae60-27bcc3de42f7)

## Fulltext

Effect of Oxygen Terminal Surface Adsorption Layer on Energy Dissipation in Single-Crystal Diamond MEMSNational Institute for Materials Science 1, Shanghai University 2, Tohoko University 3○ (DC)Keyun Gu 1,2, Zilong Zhang 3, Wen Zhao1, Guo Chen 1, Jian Huang 2, Satoshi Koizumi 1, Yasuo Koide 1, and Meiyong Liao 1E-mail: meiyong.liao@nimg.go.jp300400500600700800900804.36804.38804.40804.42 L: 80 µmFrequency (kHz)???Processing temperature (K)Test at RT(a)(b) Single-crystal diamond (SCD) presents as a promising candidate for the achievement of low mechanical dissipation or high quality (Q) factors for high-sensitivity and high signal-to-noise (SNR) ratio microelectromechanical systems (MEMS) sensors by virtue of its outstanding mechanical characteristic, high thermal conductivity, excellent electronic properties, and the characteristics of non-grain boundary and non-impurity phase [1-3]. The SCD MEMS resonators were fabricated by Ion implantation-assisted smart-cut technique [4,5]. The effect of the ion-irradiation induced defective layer has been minimized and the Q factor has been achieved over one million through atomic etching [6]. Nevertheless, how the surface terminal adsorption characteristics of diamond affects the Q factors of SCD MEMS is still mysterious. Therefore, the clarification of the oxygen-termination effect is critical to achieve the ultra-high Q factor MEMS resonators.    In this work, we clarify the effect of oxygen terminal surface adsorption characteristic on the resonance behavior of SCD MEMS resonator. We examine the Q factors and resonance frequencies of the SCD MEMS resonators with the defective layer removed in a high vacuum chamber by in-situ heating and cooling. Based on ultrahigh stability of resonance characteristic of SCD resonator at room temperature (RT) and high temperature (from 313 K to 933 K), the Q factors are significantly improved after heating processing. The Q factor of the 80 μm-long cantilever is improved from 1.0x105 to 1.2x105 and the resonance frequency increases, as shown in Fig.1. We clarify that the desorption of the absorbates on the oxygen-terminated diamond surface induces the lower surface energy dissipation and higher Q factor. Hence, appropriate surface treatments are necessary for the development of MEMS devices with low energy dissipation and high sensitivity.References: [1] H. Sun, et al., Adv. Quantum. Technol. 2300189 (2023). [2] Z. Zhang, et al., Mater. Res. Lett. 8, 180-186 (2020). [3] Z. Zhang, et al., ACS Appl. Mater. Interfaces 12, 23155-23164 (2020). [4] M. Liao, et al., Adv. Mater. Technol., 4, 1800325, 2019. [5] M. Liao, et al., Adv. Mat. 22, 5393 (2010). [6] H. Wu, et al., Carbon 124, 281-287 (2017). �Figure 1. The resonance frequency and the Q factor of the 80 μm-long cantilever measured at RT after cooling back from different high temperatures.