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[[Vol. 69]Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication_ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/c30ffd35-1351-4c76-aca8-e31a5a7d8c32/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication](https://mdr.nims.go.jp/datasets/e710c5f6-3901-40ed-8680-0b0c37a649ab)

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2022/03/31 16:16 Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication| MANAhttps://www.nims.go.jp/mana/research/highlights/vol69.html 1/2Previous  Index  NextResearch Highlights[Vol. 69]Direct Growth of Germanene Marks a Major Step for Electronic DeviceFabrication15 Jul, 2021A team at MANA has succeeded in the direct growth of h-BN-capped germanene on thesurface of silver Ag(111). They believe this could be a promising technique for thefabrication of germanene-based electronic devices in the future.The MANA group grew the germanene at interfaces of graphene/Ag(111) and hexagonal boronnitride (h-BN)/Ag(111) by segregating germanium atoms. A simple annealing process in nitrogen(N2) or hydrogen/argon (H/Ar) at ambient pressure led to the formation of germanene, whichindicated that ultrahigh-vacuum conditions are not necessary in this process. The resultinggermanene was stable in air and uniform over the entire area covered with a van der Waals (vdW)material.Germanene is one of a group of elements with two-dimensional honeycomb lattices, such assilicene, stanene and plumbene, which are collectively known as Xenes. These substances haveelectronic properties similar to those of graphene, including extremely high carrier mobility. Incontrast to graphene, however, the honeycomb-lattice crystal structure of Xenes is not flat, butbuckled, which results in their bandgaps being controllable by applying an electric field. Suchbandgap controllability would provide a way to overcome the problem of gapless graphene forfuture electronic device applications. Thus, the utilization of Xenes in electronics is highly desirable.https://www.nims.go.jp/mana/research/highlights/vol68.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol70.html2022/03/31 16:16 Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication| MANAhttps://www.nims.go.jp/mana/research/highlights/vol69.html 2/2In another important finding, the group discovered it was necessary to use a vdW material as acap layer for their germanene growth method, since the use of an Al2O3 cap layer resulted in nogermanene formation.The results also prove that Raman spectroscopy in air is a powerful tool for characterizinggermanene at an interface.This research was carried out by Seiya Suzuki (ICYS Research Fellow, International Center forYoung Scientists, ICYS-NAMIKI), Tomonobu Nakayama (MANA Principal Investigator, WPI-MANA)and their collaborators.Reference“Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)”Seiya Suzuki, Takuya Iwasaki, Kanishka H. De Silva, Shigeru Suehara, Kenji Watanabe, TakashiTaniguchi, Satoshi Moriyama, Masamichi Yoshimura, Takashi Aizawa, and Tomonobu NakayamaJournal: Advanced Functional Materials [20 November 2020]DOI : 10.1002/adfm.202007038（MANA E-BULLETIN）https://www.nims.go.jp/mana/ebulletin/AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jphttps://samurai.nims.go.jp/profiles/suzuki_seiya?locale=enhttps://samurai.nims.go.jp/profiles/nakayama_tomonobu?locale=enhttps://samurai.nims.go.jp/profiles/suzuki_seiya?locale=enhttps://samurai.nims.go.jp/profiles/iwasaki_takuya?locale=enhttps://samurai.nims.go.jp/profiles/suehara_shigeru?locale=enhttps://samurai.nims.go.jp/profiles/taniguchi_takashi?locale=enhttps://samurai.nims.go.jp/profiles/moriyama_satoshi?locale=enhttps://samurai.nims.go.jp/profiles/aizawa_takashi?locale=enhttps://samurai.nims.go.jp/profiles/nakayama_tomonobu?locale=enhttps://doi.org/10.1002/adfm.202007038https://www.nims.go.jp/mana/ebulletin/