# Fileset

[Mg2Sn-1xGex_SSDM_Regular_Paper_v2-TM.docx](https://mdr.nims.go.jp/filesets/b86dd491-ec4b-4d7d-96fd-5635ad8ec75f/download)

## Creator

Kenneth Magallon Senados, Mariana S. L. Lima, [Takashi Aizawa](https://orcid.org/0000-0003-2357-5336), [Isao Ohkubo](https://orcid.org/0000-0002-4187-0112), Takahiro Baba, Akira Uedono, Takeaki Sakurai, [Takao Mori](https://orcid.org/0000-0003-2682-1846)

## Rights

This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad1259[In Copyright](http://rightsstatements.org/vocab/InC/1.0/)

## Other metadata

[Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x               </sub>Ge<sub>                  x               </sub> thermoelectric thin films](https://mdr.nims.go.jp/datasets/058dd46d-c16c-4f28-9b27-af05a9a5a14c)

## Fulltext