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[[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/aa08b5cf-c348-4e90-904a-f37399c27863/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K](https://mdr.nims.go.jp/datasets/5b1ddd9b-490a-4b12-9a85-e5ae9b68d980)

## Fulltext

2022/03/31 16:17 New GaN MEMS Resonator Is Temperature-Stable up to 600 K| MANAhttps://www.nims.go.jp/mana/research/highlights/vol68.html 1/2Previous  Index  NextResearch Highlights[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K13 Jul, 2021A team at MANA has demonstrated a highly temperature-stable GaN resonator thatboasts high-frequency stability, high Q factor and the potential for large-scaleintegration with silicon technology.The finding could result in faster 5G electronics devices thanks to better integration of GaN-basedmicro-electromechanical and nano-electromechanical systems (MEMS/NEMS) with the currentsemiconductor technology.The GaN resonator was fabricated on a silicon substrate, and had a low temperature coefficient offrequency (TCF) of several ppm/K (parts per million per degree Kelvin) and high quality (Q) factorswithout degradation up to 600 K.The millimeter-wave 5G system that is driving the much-anticipated “internet of things” requiresincreasing modulation complexity to improve data bandwidth. But conventional quartz oscillatorsare limited by their inability to integrate well with semiconductor electronics. Using MEMS/NEMSfor reference oscillators is one way to achieve high resonance frequencies with less phase noiseand high temperature stability.Silicon-based MEMS resonators usually have a large negative TCF of around -30 ppm/K.Temperature compensation techniques, including geometry modification, impurity doping andhttps://www.nims.go.jp/mana/research/highlights/vol67.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol69.html2022/03/31 16:17 New GaN MEMS Resonator Is Temperature-Stable up to 600 K| MANAhttps://www.nims.go.jp/mana/research/highlights/vol68.html 2/2multilayer structures, have been proposed to improve the TCF, but these degraded the system's Qfactors.The MANA team used elastic strain engineering, a technique to modulate the strain at theheterojunction of the resonator structure, which helped to store energy and thereby increase Qfactors.In contrast to conventional flexural modes, the internal thermal stress at high temperaturesimproved the TCF of the GaN MEMS resonator by over 10 times, without losing the high Q factor.Group III nitrides have been excellent wide bandgap semiconductors for high-frequency electronicsin the 5G era. The integration of such MEMS with electronics is therefore promising for IoT sensorsand communications devices.This research was carried out by Liwen Sang (MANA Independent Scientist, WPI- MANA, NIMS)and her collaborators.Reference“Self-Temperature-Compensated GaN MEMS Resonators through Strain Engineering up to 600 K”Liwen Sang, Huanying Sun, Xuelin Yang, Tie-Fu Li, Bo Shen, and Meiyong Liao.Journal: 2020 IEEE International Electron Devices Meeting (IEDM). (2020)DOI : 10.1109/IEDM13553.2020.9372065（MANA E-BULLETIN）https://www.nims.go.jp/mana/ebulletin/AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jphttps://samurai.nims.go.jp/profiles/sang_liwen?locale=enhttps://samurai.nims.go.jp/profiles/sang_liwen?locale=enhttps://doi.org/10.1109/IEDM13553.2020.9372065https://www.nims.go.jp/mana/ebulletin/